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A Robust Shallow Trench Isolation High Density Plasma Chemical Vapor Deposition Void Free Process for 0.13μm CMOS Technology

Autor: Allen Bian, Paul-Chang Lin, Grace Ning, Ya-Lu Cao, Charles Xing, Hong-Bo Zhao

Publikováno v: ECS Transactions. 34:743-748

Shallow Trench Isolation(STI) is widely used in advanced CMOS technologies. This paper describes a shallow trench isolation for 0.13μm CMOS technologies development which utilizes AMAT Ultima Plus High Density Plasma (HDP) CVD oxide process to fill

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::982a57562833474645aad8d79a8dd246
https://doi.org/10.1149/1.3567667

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The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu Interconnects

Autor: Allen Bian, Neil Xu, Hua Zhou, Paul-Chang Lin, Charles Xing, Ya-Lu Cao

Publikováno v: ECS Transactions. 34:787-792

The influence of the SiN cap-layer deposition process including different pre-clean treatments on the voltage breakdown (VBD) and electromigration (EM) behavior of copper dual damascene metallization has been studied. A remarkable improvement for vol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::248b90cc2f3edede701f3196c6be66fc
https://doi.org/10.1149/1.3567674

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