Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ya-Che Yeh"'
Publikováno v:
IEEE Access, Vol 7, Pp 33024-33037 (2019)
This paper presents the design and analysis of microwave and millimeter-wave (MMW) high-linear track-and-hold amplifiers (THAs) for high-speed data conversion systems. The silicon germanium (SiGe) process utilized in the proposed circuits is analyzed
Externí odkaz:
https://doaj.org/article/aa71dfcdd96e4f9c969d2937bbb48e3a
Publikováno v:
IEEE Access, Vol 7, Pp 33024-33037 (2019)
This paper presents the design and analysis of microwave and millimeter-wave (MMW) high-linear track-and-hold amplifiers (THAs) for high-speed data conversion systems. The silicon germanium (SiGe) process utilized in the proposed circuits is analyzed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::18ca05bdb2d9facd904f747e241cc961
https://ieeexplore.ieee.org/document/8663287/
https://ieeexplore.ieee.org/document/8663287/
Publikováno v:
IEEE Access. 7:33024-33037
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb3b14a170f2345cea5c4b65980222f
https://doi.org/10.1109/access.2019.2903887
https://doi.org/10.1109/access.2019.2903887
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
A broadband high-speed high-linearity track-and-hold amplifier (THA) is presented in this paper using 0.18 μm SiGe process. A switched emitter follower track-and-hold (T/H) stage with cascode stage is adopted to achieve high resolution for analog-to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a12fc65bdf5d1745bbd368af204b4af
https://doi.org/10.1109/mwsym.2017.8058869
https://doi.org/10.1109/mwsym.2017.8058869
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
A high speed high dynamic range track-and-hold amplifier (THA) using 0.18 µm SiGe process is presented in this paper. A differential feedthrough cancellation technique is proposed to enhance the hold-mode isolation and linearity of the THA. The meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f0fb184bf42f5545b6095dc0e987ba
https://doi.org/10.1109/mwsym.2016.7540037
https://doi.org/10.1109/mwsym.2016.7540037
A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 µm SiGe process
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 µm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37967875354ea93866c50c2f3e9bf69d
https://doi.org/10.1109/mwsym.2016.7540371
https://doi.org/10.1109/mwsym.2016.7540371