Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Ya Wei Huan"'
Autor:
Ya-Wei Huan, Ke Xu, Wen-Jun Liu, Hao Zhang, Dmitriy Anatolyevich Golosov, Chang-Tai Xia, Hong-Yu Yu, Xiao-Han Wu, Qing-Qing Sun, Shi-Jin Ding
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixe
Externí odkaz:
https://doaj.org/article/0d6051b1250f4257aae35e23e5d4d004
Autor:
Ya-Wei Huan, Wen-Jun Liu, Xiao-Bing Tang, Xiao-Yong Xue, Xiao-Lei Wang, Qing-Qing Sun, Shi-Jin Ding
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Abstract The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment we
Externí odkaz:
https://doaj.org/article/803c20aee5924ad2a8f5b0eb886f8efd
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I b
Externí odkaz:
https://doaj.org/article/dd70bcfc9d914f27b984aa2021aaa066
Autor:
Ya-Wei Huan, Shun-Ming Sun, Chen-Jie Gu, Wen-Jun Liu, Shi-Jin Ding, Hong-Yu Yu, Chang-Tai Xia, David Wei Zhang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Abstract Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6
Externí odkaz:
https://doaj.org/article/a6ada104334646bd8368cba20ce476bd
Autor:
Ke Xu, Xiaohan Wu, Hao Zhang, Ya-Wei Huan, D. A. Golosov, Wen-Jun Liu, Changtai Xia, Hongyu Yu, Qing-Qing Sun, Shi-Jin Ding
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensi
Autor:
Wen-Jun Liu, Xiao-Lei Wang, Shi-Jin Ding, Xiao-Yong Xue, Ya-Wei Huan, Xiao-Bing Tang, Qing-Qing Sun
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determ
Publikováno v:
Nanoscale Research Letters. 13
The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets r
Autor:
Changtai Xia, Shun-Ming Sun, Wen-Jun Liu, Shi-Jin Ding, Hongyu Yu, Ya-Wei Huan, David Wei Zhang, Chen-Jie Gu
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV
Autor:
Wen-Jun Liu, Jian-Guo Yang, Hao Liu, Ya-Wei Huan, Shun-Ming Sun, He-Mei Zheng, Bao Zhu, Shi-Jin Ding
Publikováno v:
Chinese Physics Letters. 35:127302
Autor:
Hong-Liang Lu, Hong Dong, Hongyu Yu, Ray-Hua Horng, Xinglu Wang, Sudong Wu, David Wei Zhang, Shi Bing Long, Chang Tai Xia, Shun Ming Sun, Ya Wei Huan, Shi-Jin Ding, Wen-Jun Liu, Wen Jie Yu, Q. Q. Sun, Jian Guo Yang
Publikováno v:
Japanese Journal of Applied Physics. 57:100312
The energy band offsets between indium–gallium–zinc oxide (IGZO) and β-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the β-Ga2O3