Zobrazeno 1 - 10 of 214 pro vyhledávání: '"Ya Hsiang Tai"'
1
Akademický článek
The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination
Autor: Ya-Hsiang Tai, Yi-Cheng Yuan, Cheng-Che Tu, Pin-Chun Wang
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 10, Pp 309-312 (2022)
Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap
Externí odkaz: https://doaj.org/article/26e252ff9c1b4efb9746367228740d0d
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2
Akademický článek
Light-Controlled Gap-Type TFT Used for Large-Area Under-Screen Fingerprint Sensor
Autor: Ya-Hsiang Tai, Cheng-Che Tu, Yi-Cheng Yuan, Yu-Jia Chang, Mao-Hsiu Hsu, Che-Yu Chuang
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 517-520 (2021)
In the fierce market competition of different biometric methods in smartphones, where consumers are pursuing a high screen ratio, optical fingerprint recognition under OLED screen is a well-established approach. However, using thin-film transistor (T
Externí odkaz: https://doaj.org/article/671cbbeb23de4f899ab9074a5e35095b
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3
Akademický článek
The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors
Autor: Ya-Hsiang Tai, Han-Wen Liu, Po-Chun Chan
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 7, Pp 33-37 (2019)
In this paper, the reaction rate of oxygen vacancy (VO) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, aft
Externí odkaz: https://doaj.org/article/a298394c1f6a4bc4a539e364494a819a
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5
Differential Signal Acquisition Using TFT Light-Sensing Pixel Array
Autor: Cheng-Che Tu, Ya-Hsiang Tai, Ping-Ju Huang
Publikováno v: IEEE Transactions on Electron Devices. 68:3403-3410
Differential signal acquisition is suitable for tiny signal sensing applications. By eliminating background offset impact, it optimizes sensing accuracy. In this article, we propose the differential sensing pixel circuit. The circuit can separate the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b254026e91196547faed7f337e72fcb
https://doi.org/10.1109/ted.2021.3078664
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7
Light-Controlled Gap-Type TFT Used for Large-Area Under-Screen Fingerprint Sensor
Autor: Che-Yu Chuang, Yu-Jia Chang, Mao-Hsiu Hsu, Ya-Hsiang Tai, Yi-Cheng Yuan, Cheng-Che Tu
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 517-520 (2021)
In the fierce market competition of different biometric methods in smartphones, where consumers are pursuing a high screen ratio, optical fingerprint recognition under OLED screen is a well-established approach. However, using thin-film transistor (T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79d41e66eeb08c8db92abb4f085dc2a2
https://doi.org/10.1109/jeds.2021.3076832
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10
Total-Dose Effect of X-ray Irradiation on Low-Temperature Polycrystalline Silicon Thin-Film Transistors
Autor: Ya-Hsiang Tai, Shih-Hsuan Huang, Ting-Chang Chang, Shan Yeh
Publikováno v: IEEE Electron Device Letters. 41:864-867
In this paper, the total-dose effect of X-ray irradiation on low-temperature polycrystalline-silicon (LTPS) thin film transistors (TFTs) is studied. Experiments under different conditions, including fixed intensity, fixed time, fixed total dose, shor
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a648842dd72a65ec87c1f3a13a3f99f
https://doi.org/10.1109/led.2020.2988879
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