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pro vyhledávání: '"Ya A Aarik"'
Publikováno v:
Soviet Journal of Quantum Electronics. 17:1375-1378
A study of optical amplification in AlGaAsSb/GaSb double-sided heterostructure lasers at temperatures 90–305K yielded the dependences of the gain on the rate of pumping of the active GaSb layer (p≈1018cm−3). The gain g depended linearly on the
Autor:
P G Eliseev, Ya A Aarik, V A Skripkin, L V Druzhinina, A E Drakin, L M Dolginov, P A Lyuk, B N Sverdlov, Ya F Friedentkhal
Publikováno v:
Soviet Journal of Quantum Electronics. 10:50-53
The characteristics of heterostructures and the main radiative properties of infrared (1.4--1.8 ..mu..) heterojunction lasers using quaternary solid solutions of AlGaAsSb, grown by liquid--phase epitaxy of GaSb substrates, are presented. A threshold