Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ya A Aarik"'
Publikováno v:
Soviet Journal of Quantum Electronics. 17:1375-1378
A study of optical amplification in AlGaAsSb/GaSb double-sided heterostructure lasers at temperatures 90–305K yielded the dependences of the gain on the rate of pumping of the active GaSb layer (p≈1018cm−3). The gain g depended linearly on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3faca9709d5389452cc35b5903b0a26
https://doi.org/10.1070/qe1987v017n11abeh010836
https://doi.org/10.1070/qe1987v017n11abeh010836
Autor:
P G Eliseev, Ya A Aarik, V A Skripkin, L V Druzhinina, A E Drakin, L M Dolginov, P A Lyuk, B N Sverdlov, Ya F Friedentkhal
Publikováno v:
Soviet Journal of Quantum Electronics. 10:50-53
The characteristics of heterostructures and the main radiative properties of infrared (1.4--1.8 ..mu..) heterojunction lasers using quaternary solid solutions of AlGaAsSb, grown by liquid--phase epitaxy of GaSb substrates, are presented. A threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a92d872498e8c16d34bf30d5e51fbe37
https://doi.org/10.1070/qe1980v010n01abeh009853
https://doi.org/10.1070/qe1980v010n01abeh009853
Autor:
Aarik, Ya A, Dolginov, L M, Drakin, A E, Druzhinina, L V, Eliseev, P G, Lyuk, P A, Sverdlov, B N, Skripkin, V A, Friedentkhal', Ya F
Publikováno v:
Soviet Journal of Quantum Electronics; Jan1980, Vol. 10 Issue 1, p50-53, 4p
Autor:
Bochkarev, A. É, Dolginov, L. M., Drakin, A. E., Druzhinina, L. V., Eliseev, P. G., Sverdlov, B. N.
Publikováno v:
Soviet Journal of Quantum Electronics; 1985, Vol. 15 Issue 6, p1-1, 1p
Autor:
Devyatykh, G. G., Dianov, Evgenii M., Karpychev, N. S., Mazavin, S. M., Mashinskiĭ, V. M., Neustruev, V. B., Nikolaĭchik, A. V., Prokhorov, A. M., Ritus, A. I., Sokolov, N. I., Yushin, A. S.
Publikováno v:
Soviet Journal of Quantum Electronics; 1980, Vol. 10 Issue 7, p1-1, 1p