Zobrazeno 1 - 10
of 417
pro vyhledávání: '"Ya‐Chin King"'
Autor:
Yu-Cheng Hsieh, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process. Multi-level states in via RRAM are achieved by controlling the current compliance during set operati
Externí odkaz:
https://doaj.org/article/7862707f522f4c4cb79ddbffba4f7f6d
Autor:
Ying-Chun Shen, Bang-Kai Wu, Tsung-Shun Tsai, Mingjin Liu, Jyun-Hong Chen, Tzu-Yi Yang, Ruei-Hong Cyu, Chieh-Ting Chen, Yu-Chieh Hsu, Chai-Hung Luo, Yu-Qi Huang, Yu-Ren Peng, Chang-Hong Shen, Yen-Fu Lin, Po-Wen Chiu, Ya-Chin King, Yu-Lun Chueh
Publikováno v:
Small Science, Vol 4, Iss 2, Pp n/a-n/a (2024)
A top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A
Externí odkaz:
https://doaj.org/article/6b2b122fd0cc4bc890c37faa68f3a2b0
Autor:
Chien-Ping Wang, Burn Jeng Lin, Pin-Jiun Wu, Jiaw-Ren Shih, Yue-Der Chih, Jonathan Chang, Chrong Jung Lin, Ya-Chin King
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-7 (2022)
Abstract An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node
Externí odkaz:
https://doaj.org/article/2d23c787cc12438bb50629a0d69be70e
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-6 (2021)
Abstract This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage pa
Externí odkaz:
https://doaj.org/article/2048a2b10dbe452aa2d302480cd02be3
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Abstract As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between
Externí odkaz:
https://doaj.org/article/3acceb29ffa7492ab61fa86bbe5f21b8
Autor:
Chien-Ping Wang, Burn Jeng Lin, Jiaw-Ren Shih, Yue-Der Chih, Jonathan Chang, Chrong Jung Lin, Ya-Chin King
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-6 (2021)
Abstract A novel in situ imaging solution and detectors array for the focused electron beam (e-beam) are the first time proposed and demonstrated. The proposed in-tool, on-wafer e-beam detectors array features full FinFET CMOS logic compatibility, co
Externí odkaz:
https://doaj.org/article/7009070df9e04b42a9711c01067ee7c6
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-7 (2020)
Abstract High-density interconnects, enabled by advanced CMOS Cu BEOL technologies, lead to closely placed metals layers. High-aspect ratio metal lines require extensive plasma etching processes, which may cause reliability concerns on inter metal di
Externí odkaz:
https://doaj.org/article/c5f37579d9c740299df0877a13279660
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 681-685 (2020)
A new self-converging programming characteristic in a single-poly floating-gate memory cell with full-compatibility to a CMOS logic technology is observed and studied. A uniquely design cell with a narrow-bridging line between two coupling capacitors
Externí odkaz:
https://doaj.org/article/da55bb9d3c28469fb2d99a1650a2c6ca
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 465-473 (2020)
Fast and stable switching between states is one of the key factors for the success resistive random access memory (RRAM) development. In an array, wide reset efficiency variation in RRAM cells is found to link to the characteristics of its low freque
Externí odkaz:
https://doaj.org/article/2900cda1d71d4816a0e1c1395dc0937f
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
Abstract In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cy
Externí odkaz:
https://doaj.org/article/8785a4a499b64373be8a6877eb354684