Zobrazeno 1 - 10
of 220
pro vyhledávání: '"YUN, Seok Joon"'
Autor:
Harris, Sumner B., Biswas, Arpan, Yun, Seok Joon, Rouleau, Christopher M., Puretzky, Alexander A., Vasudevan, Rama K., Geohegan, David B., Xiao, Kai
Synthesis of thin films has traditionally relied upon slow, sequential processes carried out with substantial human intervention, frequently utilizing a mix of experience and serendipity to optimize material structure and properties. With recent adva
Externí odkaz:
http://arxiv.org/abs/2308.08700
Publikováno v:
In Current Applied Physics February 2025 70:61-68
Probing the multi-disordered nanoscale alloy at the interface of lateral heterostructure of MoS2–WS2
Autor:
Kim Dong Hyeon, Lee Chanwoo, Kim Sung Hyuk, Jeong Byeong Geun, Yun Seok Joon, Suh Hyeong Chan, Lee Dongki, Kim Ki Kang, Jeong Mun Seok
Publikováno v:
Nanophotonics, Vol 13, Iss 7, Pp 1069-1077 (2024)
Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However,
Externí odkaz:
https://doaj.org/article/a5b76ab222104174adcf7fa77b0024dd
The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom t
Externí odkaz:
http://arxiv.org/abs/2110.14801
Autor:
Kim, Un Jeong, Han, Yoojoong, Nugera, Florence A., Yun, Seok Joon, Kim, Seok In, Lee, Moonsang, Gutiérrez, Humberto R., Lee, Young Hee, Son, Hyungbin
Publikováno v:
In Nano Today April 2024 55
Autor:
Kumar, Sunil, Singh, Arvind, Nivedan, Anand, Kumar, Sandeep, Yun, Seok Joon, Lee, Young Hee, Tondusson, Marc, Degert, Jérôme, Oberle, Jean, Freysz, Eric
Publikováno v:
Nano Select (2021)
Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon energies be
Externí odkaz:
http://arxiv.org/abs/2103.11101
Autor:
Kumar, Sunil, Singh, Arvind, Kumar, Sandeep, Nivedan, Anand, Tondusson, Marc, Degert, Jerome, Oberle, Jean, Yun, Seok Joon, Lee, Young Hee, Freysz, Eric
Publikováno v:
Optics Express (2021)
THz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is e
Externí odkaz:
http://arxiv.org/abs/2012.10096
Autor:
Adhikari, Subash, Kim, Ji-Hee, Song, Bumsub, Doan, Manh-Ha, Tran, Minh Dao, Gomez, Leyre, Kim, Hyun, Gul, Hamza Zad, Ghimire, Ganesh, Yun, Seok Joon, Gregorkiewicz, Tom, Lee, Young Hee
Many-body effect and strong Coulomb interaction in monolayer transition metal dichalcogenides lead to shrink the intrinsic bandgap, originating from the renormalization of electrical/optical bandgap, exciton binding energy, and spin-orbit splitting.
Externí odkaz:
http://arxiv.org/abs/2010.14015
Autor:
Agyapong-Fordjour, Frederick Osei-Tutu, Yun, Seok Joon, Kim, Hyung-Jin, Choi, Wooseon, Choi, Soo Ho, Adofo, Laud Anim, Boandoh, Stephen, Kim, Yong In, Kim, Soo Min, Kim, Young-Min, Lee, Young Hee, Han, Young-Kyu, Kim, Ki Kang
Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due
Externí odkaz:
http://arxiv.org/abs/2010.10908
Autor:
Choi, Soo Ho, Kim, Hyung-Jin, Song, Bumsub, Kim, Yong In, Han, Gyeongtak, Ko, Hayoung, Boandoh, Stephen, Choi, Ji Hoon, Oh, Chang Seok, Jin, Jeong Won, Yun, Seok Joon, Shin, Bong Gyu, Jeong, Hu Young, Kim, Young-Min, Han, Young-Kyu, Lee, Young Hee, Kim, Soo Min, Kim, Ki Kang
Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been succ
Externí odkaz:
http://arxiv.org/abs/2010.10097