Zobrazeno 1 - 10 of 13 pro vyhledávání: '"YUJIRO ISHIHARA"'
1
Akademický článek
Associations of body composition with physical activity, nutritional intake status, and chronotype among female university students in Japan
Autor: Kazushige Oshita, Yujiro Ishihara, Kohei Seike, Ryota Myotsuzono
Publikováno v: Journal of Physiological Anthropology, Vol 43, Iss 1, Pp 1-9 (2024)
Abstract Background Having higher muscle mass in early adulthood is an important factor in preventing sarcopenia. However, university students undergo lifestyle changes compared to their high school years, which may lead to changes in body compositio
Externí odkaz: https://doaj.org/article/60932aeefe1f45a9b25db31d9387240f
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2
Akademický článek
A Cross-Sectional Study for a Reference Model of Body Composition in Japanese Children Aged 3 to 10 Years
Autor: Keisuke Teramoto, Kodo Otoki, Erina Muramatsu, Yui Kataoka, Chika Oya, Yujiro Ishihara, Shuichi Komiya
Publikováno v: International Journal of School Health, Vol 9, Iss 1 (2022)
Background: The purpose of this study was to clarify the standard values of body composition for Japanese preschool and postschool-age children according to age and gender. Methods: The population of this cross-sectional study comprised 4,289 childre
Externí odkaz: https://doaj.org/article/339493763ac74f019cbdc16910a016fc
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7
Akademický článek
Characteristics of enjoyment of physical activity by gender and favorability of physical education classes.
Autor: CHIKA OYA, YUJIRO ISHIHARA
Publikováno v: Journal of Physical Education & Sport; Jul2022, Vol. 22 Issue 7, p1732-1741, 10p
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8
Electron Spin Resonance in GaN Thin Film Doped with Fe
Autor: Masayuki Hagiwara, Saki Sonoda, Haruhiko Yashiro, Takanari Kashiwagi, Akira Usui, Youichi Akasaka, Yujiro Ishihara
Publikováno v: Japanese Journal of Applied Physics. 46:581-585
High-quality and high-resistivity semiconducting substrates are needed to fabricate high-frequency devices such as high-mobility transistors based on gallium nitride (GaN). A GaN thin film doped with Fe ions becomes one of such high-resistivity subst
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeda606457f339879d87576549f7bfcd
https://doi.org/10.1143/jjap.46.581
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9
GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy through Nanometer-Size Channels Fabricated with Nanoimprint Lithography
Autor: Haruo Sunakawa, Hidetoshi Shinohara, Yujiro Ishihara, Akira Usui, Hiroshi Goto, Atsushi A. Yamaguchi, Fujiyama Yasuharu, Akiko Okada, Hiromi Nishihara, Hiroki Goto, Toshiharu Matsueda, Shuichi Shoji, Jun Mizuno
Publikováno v: Japanese Journal of Applied Physics. 52:08JB02
Epitaxial lateral overgrowth (ELO) has been used for reducing the dislocation density to grow high-quality GaN crystals. In conventional ELO, micrometer-size channels formed on a mask material such as SiO2, where GaN growth starts, are generally used
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19f84ecafaee1c18053525ce43720363
https://doi.org/10.7567/jjap.52.08jb02
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10
Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques
Autor: Akira Uedono, Akira Usui, Takeyoshi Onuma, Shigefusa F. Chichibu, Masashi Kubota, Yujiro Ishihara
Publikováno v: Journal of Applied Physics. 105:083542
The thermal stability of electrical resistivity (ρ) is one of the crucial functions of semi-insulating (SI) substrates. In this paper, we describe the thermal stability of SI property in Fe-doped GaN (GaN:Fe) films grown by hydride vapor phase epita
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::acd9467b6bfe0ac438e0f324aaf4429b
https://doi.org/10.1063/1.3110205
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