Zobrazeno 1 - 10
of 186
pro vyhledávání: '"YU De-lin"'
Publikováno v:
Chinese Journal of Contemporary Neurology and Neurosurgery, Vol 23, Iss 10, Pp 933-939 (2023)
Objective To explore diagnosis points of carotid artery ultrosound in patients of internal carotid artery (ICA) absence and other imaging features. Methods and Results Total 14 patients diagnosed with ICA absence in Tianjin Huanhu Hospital from Janua
Externí odkaz:
https://doaj.org/article/58d608bc51464704b325a3ff51d8a25b
Autor:
Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Sk. Ziaur Rahaman, Kan-Hsueh Tsai, Chien-Hua Hsu, Wei-Su Chen, Pei-Hua Wang, Ya-Chin King, Chrong Jung Lin
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in
Externí odkaz:
https://doaj.org/article/3d97a3c18f384278bd773d0cc0904cb6
Publikováno v:
International Journal of Software Innovation (IJSI); January 2024, Vol. 12 Issue: 1 p1-17, 17p
Publikováno v:
Wireless Communications and Mobile Computing, Vol 2021 (2021)
With the popularity of mobile devices, using the traditional client-server model to handle a large number of requests is very challenging. Wireless data broadcasting can be used to provide services to many users at the same time, so reducing the aver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::098c0117c2498b2acfa18d22f6ea20ad
https://doi.org/10.1155/2021/1863590
https://doi.org/10.1155/2021/1863590
Autor:
Hsin-Hui Huang, Chen-Yi Cho, Tzu-Yao Lin, Tz-Shiuan Huang, Ming-Hung Wu, I-Ting Wang, Yu-Kai Chang, Chen-Han Chou, Pei-Jean Liao, Hsin-Yun Yang, Yu-De Lin, Po-Chun Yeh, Shyh-Shyuan Sheu, Tuo-Hung Hou
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5870c9144e739b480a5aa9c5bb717b2
https://doi.org/10.1109/iedm45625.2022.10019559
https://doi.org/10.1109/iedm45625.2022.10019559
Autor:
Yu-De Lin, Po-Chun Yeh, Jheng-Yang Dai, Jian-Wei Su, Hsin-Hui Huang, Chen-Yi Cho, Ying-Tsan Tang, Tuo-Hung Hou, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848066057acc26ee4416f8655dbdb769
https://doi.org/10.1109/iedm45625.2022.10019561
https://doi.org/10.1109/iedm45625.2022.10019561
Autor:
Tz-Shiuan Huang, Po-Chun Yeh, Hsin-Yun Yang, Yu-De Lin, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Wei-Chung Lo, Chih-I Wu, Tuo-Hung Hou
Publikováno v:
2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36f1bd4af5bc8093bc4a0f69af4a0ca4
https://doi.org/10.1109/vlsi-tsa54299.2022.9771032
https://doi.org/10.1109/vlsi-tsa54299.2022.9771032
Autor:
Yu-De Lin, Po-Chun Yeh, Ying-Tsan Tang, Jian-Wei Su, Hsin-Yun Yang, Yu-Hao Chen, Chih-Pin Lin, Po-Shao Yeh, Jui-Chin Chen, Pei-Jer Tzeng, Min-Hung Lee, Tuo-Hung Hou, Shyh-Shyuan Sheu, Wei-Chung Lo, Chih-I Wu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900cfd8cecaffe11f9445573a706ff39
https://doi.org/10.1109/iedm19574.2021.9720692
https://doi.org/10.1109/iedm19574.2021.9720692
Publikováno v:
Innovation in Design, Communication and Engineering ISBN: 9780429057663
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0b8447203d8df3b1cc8fe9374d7158
https://doi.org/10.1201/9780429057663-5
https://doi.org/10.1201/9780429057663-5
Autor:
S.-H. Chang, Min-Hung Lee, S.-H. Chiang, Ming-Han Liao, C.-Y. Wang, Chun-Ming Chang, H.-Y. Yang, Yu-De Lin, Y.-Y. Lin, Y.-Y. Tseng, K.-T. Chen, P.-C. Yeh, P.-J. Tzeng, J.-H. Liu, C. Lo, G.-Y. Siang, H. Liang, C.-Y. Chueh, Yao-Joe Yang, Y.-J. Tseng, Shun-Ping Chang, F.-C. Hsieh
Publikováno v:
IRPS
The 3D double layer Ω-type FETs with ferroelectric HfZrO 2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 106 cycles P/E with 4V. Multi-domain model inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90835884fd91981387bd12ebaaf6ec11
https://doi.org/10.1109/irps45951.2020.9129088
https://doi.org/10.1109/irps45951.2020.9129088