Zobrazeno 1 - 10
of 10 092
pro vyhledávání: '"YOUNG, IAN"'
Back propagation (BP) is the default solution for gradient computation in neural network training. However, implementing BP-based training on various edge devices such as FPGA, microcontrollers (MCUs), and analog computing platforms face multiple maj
Externí odkaz:
http://arxiv.org/abs/2411.05873
Autor:
Kumarasubramanian, Harish, Ravindran, Prasanna Venkat, Liu, Ting-Ran, Song, Taeyoung, Surendran, Mythili, Chen, Huandong, Buragohain, Pratyush, Tung, I-Cheng, Gupta, Arnab Sen, Steinhardt, Rachel, Young, Ian A., Shao, Yu-Tsun, Khan, Asif Islam, Ravichandran, Jayakanth
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and technological importance, but the probes of ferroelectricity have often bee
Externí odkaz:
http://arxiv.org/abs/2407.13953
Autor:
Arango, Isabel C., Choi, Won Young, Pham, Van Tuong, Groen, Inge, Vaz, Diogo C., Debashis, Punyashloka, Li, Hai, DC, Mahendra, Oguz, Kaan, Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix
Publikováno v:
Physical Review B 108, 104425 (2023)
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputt
Externí odkaz:
http://arxiv.org/abs/2311.03598
Autor:
Gallego, Fernando, Trier, Felix, Mallik, Srijani, Bréhin, Julien, Varotto, Sara, Vicente-Arche, Luis Moreno, Gosavy, Tanay, Lin, Chia-Ching, Coudevylle, Jean-René, Iglesias, Lucía, Casanova, Félix, Young, Ian, Vila, Laurent, Attané, Jean-Philippe, Bibes, Manuel
The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conver
Externí odkaz:
http://arxiv.org/abs/2309.13992
Autor:
Fedorova, Natalya S., Nikonov, Dmitri E., Mangeri, John M., Li, Hai, Young, Ian A., Íñiguez, Jorge
In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a realistic
Externí odkaz:
http://arxiv.org/abs/2307.14789
Autor:
Vaz, Diogo C., Lin, Chia-Ching, Plombon, John J., Choi, Won Young, Groen, Inge, Arango, Isabel C., Chuvilin, Andrey, Hueso, Luis E., Nikonov, Dmitri E., Li, Hai, Debashis, Punyashloka, Clendenning, Scott B., Gosavi, Tanay A., Huang, Yen-Lin, Prasad, Bhagwati, Ramesh, Ramamoorthy, Vecchiola, Aymeric, Bibes, Manuel, Bouzehouane, Karim, Fusil, Stephane, Garcia, Vincent, Young, Ian A., Casanova, Fèlix
Publikováno v:
Nature Communications 15, 1902 (2024)
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternativel
Externí odkaz:
http://arxiv.org/abs/2302.12162