Zobrazeno 1 - 10
of 23
pro vyhledávání: '"YOSHITAKE OHNISHI"'
Publikováno v:
ACS Symposium Series ISBN: 9780841235816
Micro-and Nanopatterning Polymers
Micro-and Nanopatterning Polymers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d4647f21d6daf088cc7923a5c65c52
https://doi.org/10.1021/bk-1998-0706.ch019
https://doi.org/10.1021/bk-1998-0706.ch019
Autor:
Yoshitake Ohnishi
Publikováno v:
Kobunshi. 45:666-666
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b551015305fab1497cca1724d6f418bb
https://doi.org/10.1295/kobunshi.45.666
https://doi.org/10.1295/kobunshi.45.666
Autor:
Yoshitake Ohnishi, Takahisa Ogasawara, Hitoshi Kato, Takeshi Endo, Kiyokazu Mizutani, Kazuhide Saigo, Katsumi Tanigaki
Publikováno v:
Journal of Applied Polymer Science. 30:1419-1428
Reaction behavior of spiroorthoester and bicycloorthoester to EB and X-ray irradiations has been studied on the basis of infrared spectroscopic analysis. The polymers containing these functional groups showed markedly high sensitivity to EB and X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a36b3f9288f21ad6a0ef411b095d4d
https://doi.org/10.1002/app.1985.070300409
https://doi.org/10.1002/app.1985.070300409
Autor:
Yoshitake Ohnishi, Minoru Ozutsumi
Publikováno v:
Applied Physics Letters. 24:213-216
The effect of a charge‐transfer complex pair on dynamic scattering (DS) properties in nematic liquid crystals is reported. With the use of a hydroquinone‐quinone complex pair as dopant, more than one‐year continuous dc operation of DS has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655ce6937826fd9f9528cac19e3a0b6d
https://doi.org/10.1063/1.1655157
https://doi.org/10.1063/1.1655157
Publikováno v:
Polymer Engineering and Science. 26:1116-1122
Radiation-induced reactions of polystyrene derivatives have been studied by the radiolysis of ring-substituted isopropylbenzene derivatives, i. e., 4-amino. 4-hydroxy, 4-methoxy, 4-methyl, 4-chloromethyl, 4-chloro, and 4-acetyl derivatives. Low-tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e0074e6d5852332c008b60060a1416a
https://doi.org/10.1002/pen.760261608
https://doi.org/10.1002/pen.760261608
Publikováno v:
Microelectronic Engineering. 1:251-262
Oxygen ion-beam etch resistance of metal-free and organosilicon resist materials has been studied, using an etching system with a Kaufman ion gun. The etch rate for metal-free resist materials is inversely proportional to the number of effective carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::941cb80478ca7f1ed91c51ef0ec4bc2b
https://doi.org/10.1016/0167-9317(83)90015-1
https://doi.org/10.1016/0167-9317(83)90015-1
Publikováno v:
Journal of The Electrochemical Society. 132:909-913
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ffa1b7c6a72525239171bd20c0736c
https://doi.org/10.1149/1.2113983
https://doi.org/10.1149/1.2113983
Autor:
Masayoshi Suzuki, Yoshitake Ohnishi
Publikováno v:
Journal of The Electrochemical Society. 129:402-405
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b5230c2d34725c3d85a1067d4ed0be4
https://doi.org/10.1149/1.2123867
https://doi.org/10.1149/1.2123867
Publikováno v:
Journal of The Electrochemical Society. 133:977-981
The concept of blend resists in cross‐linking negative resists is presented, and chloromethylstyrene‐based blend resists are newly proposed on the basis of reaction mechanism. In chloromethylstyrene‐based blend resists, almost the same sensitiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5ca1ba6a746b8db4011094a0cf6aae
https://doi.org/10.1149/1.2108780
https://doi.org/10.1149/1.2108780
Publikováno v:
Applied Physics Letters. 38:867-869
It is shown that interstitial oxygen infrared (IR) absorption at 515 cm−1 decreases anomalously compared with the absorption at 1106 cm−1 in heat‐treated Czochralski‐grown silicon wafers. This phenomenon is described by the close correlation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d9105f92b2f1d6f084a2bc5149344e
https://doi.org/10.1063/1.92202
https://doi.org/10.1063/1.92202