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Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 69, Iss No 2, Pp 459-463 (2024)
Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD
Externí odkaz:
https://doaj.org/article/c93f3d1f1ab74fd2a1f695e3246c190d
