Zobrazeno 1 - 10
of 198
pro vyhledávání: '"YASSIEVICH, I. N."'
In the empirical tight-binding approach we study the electronic states in spherical SiGe nanocrystals embedded in SiO2 matrix. The energy and valley structure is obtained as a function of Ge composition and nanocrystal size. The calculations show tha
Externí odkaz:
http://arxiv.org/abs/1901.04271
Autor:
Nestoklon, M. O., Goupalov, S. V., Dzhioev, R. I., Ken, O. S., Korenev, V. L., Kusrayev, Yu. G., Sapega, V. F., de Weerd, C., Gomez, L., Gregorkiewicz, T., Lin, Junhao, Suenaga, Kazutomo, Fujiwara, Yasufumi, Matyushkin, L. B., Yassievich, I. N.
Publikováno v:
Phys. Rev. B 97, 235304 (2018)
We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. Fro
Externí odkaz:
http://arxiv.org/abs/1802.00726
The decay of the optical phonon into the two phonons of smaller energy is calculated for Si nanocrystals. The rate of the process is in the range of 1 to 10 ps. Such anharmonic phonon decay may control the energy relaxation rate of excited carriers i
Externí odkaz:
http://arxiv.org/abs/1304.1623
Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is fo
Externí odkaz:
http://arxiv.org/abs/1010.0166
Autor:
Prokofiev, A. A., Moskalenko, A. S., Yassievich, I. N., de Boer, W. D. A. M., Timmerman, D., Zhang, H., Buma, W. J., Gregorkiewicz, T.
Publikováno v:
JETP Letters (Pis'ma v ZhETF), vol. 90, issue 12, p. 856 (2009)
The effect of quantum confinement on the direct bandgap of spherical Si nanocrystals has been modelled theoretically. We conclude that the energy of the direct bandgap at the $\Gamma$-point decreases with size reduction: quantum confinement enhances
Externí odkaz:
http://arxiv.org/abs/0901.4268
We propose a mechanism of energy relaxation for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. The carrier transitions are due to their interaction with the oscillating electric field induced by the local v
Externí odkaz:
http://arxiv.org/abs/0808.1086
Autor:
Izeddin, I., Timmerman, D., Gregorkiewicz, T., Moskalenko, A. S., Prokofiev, A. A., Yassievich, I. N., Fujii, M.
We present a high-resolution photoluminescence study of Er-doped SiO2 sensitized with Si nanocrystals (Si NCs). Emission bands originating from recombination of excitons confined in Si NCs and of internal transitions within the 4f-electron core of Er
Externí odkaz:
http://arxiv.org/abs/0806.0960
Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such tr
Externí odkaz:
http://arxiv.org/abs/0805.3451
Publikováno v:
Phys. Rev. B 76, 085427 (2007)
We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO$_2$ in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective m
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609193
Autor:
Glazov, M. M., Alekseev, P. S., Odnoblyudov, M. A., Chistyakov, V. M., Tarasenko, S. A., Yassievich, I. N.
Publikováno v:
Phys. Rev. B 71, 155313 (2005)
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of elec
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410198