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pro vyhledávání: '"YANG, CHENG CHUNG"'
Akademický článek
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Autor:
Yang, Cheng-Chung, 楊正中
99
The applications of microfluidic systems developed very fast, in recent years. The microfluidic systems are not only compact, lightweight, stable, low cost, facilitate but also rapid response. In these years, electronic, mechanical, chemica
The applications of microfluidic systems developed very fast, in recent years. The microfluidic systems are not only compact, lightweight, stable, low cost, facilitate but also rapid response. In these years, electronic, mechanical, chemica
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/64168220308275745117
Autor:
Yang, Cheng-Chung.
Thesis (M.A.)--National Taiwan University Graduate Institute of Electrical Engineering.
Non-Latin script record. Includes bibliographical references.
Non-Latin script record. Includes bibliographical references.
Autor:
Yang,Cheng-Chung, 陽正中
94
One of the motivations and purposes for enterprises to do Corporate Philanthropy is that they believe Corporate Philanthropy can strength the organizational commitment that employees make to the companies. Is this really true? The main point
One of the motivations and purposes for enterprises to do Corporate Philanthropy is that they believe Corporate Philanthropy can strength the organizational commitment that employees make to the companies. Is this really true? The main point
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/96573251219993707326
Autor:
Wen, Shon-Hang, Chen, Chien-Ming, Yang, Cheng-Chung, Chen, Chieh-Hung, Jiang, Jia-Feng, Hsiao, Keng-Jan, Chien, Cheng-Yu
Publikováno v:
2015 IEEE Asian Solid-State Circuits Conference (A-SSCC); 2015, p1-4, 4p
Autor:
YANG, CHENG CHUNG, 楊正中
84
Three different type of solutions including C4H6O4/NH4OH/H2 O2,C6H8O7.H2O/ H2O2,C6H8O7/H2O2,were used as selective etching solutions for GaAs/AlAs,GaAs/ Al0.32Ga0.68As structure. The results of this study were applied to gate recess of the he
Three different type of solutions including C4H6O4/NH4OH/H2 O2,C6H8O7.H2O/ H2O2,C6H8O7/H2O2,were used as selective etching solutions for GaAs/AlAs,GaAs/ Al0.32Ga0.68As structure. The results of this study were applied to gate recess of the he
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/07879148288851561895
Publikováno v:
Proceedings of the 2nd International Conference on Intelligent Technologies & Engineering Systems (ICITES2013); 2014, p899-905, 7p
Publikováno v:
Proceedings of the 2nd International Conference on Intelligent Technologies & Engineering Systems (ICITES2013); 2014, p367-373, 7p
Akademický článek
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Publikováno v:
Applied Physics Letters; 1/29/2001, Vol. 78 Issue 5, p574, 3p, 1 Diagram, 3 Graphs