Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Y.Z. Tong"'
Autor:
Zuojian Pan, Jingxin Nie, Tianhang Zhou, Xin Yu, Bo Shen, Xin Xi, Yiyong Chen, Guoyi Zhang, Yongzhi Wang, Shuzhe Zhou, Xiangning Kang, Qi Wang, Y.Z. Tong, Wei-Min Dang, Zhizhong Chen, Fei Jiao, Wentian Dong, Chuhan Deng, Jinglin Zhan
Publikováno v:
Optics & Laser Technology. 145:107463
The spectral transmittance of ocular media on the short-wavelength light is higher for young observers than elders. It is essential to concentrate on the photobiological safety of children and circadian effect of elders when designing the light sourc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f18f92d17cddffb924b689c2bb1d945
https://doi.org/10.1016/j.optlastec.2021.107463
https://doi.org/10.1016/j.optlastec.2021.107463
Autor:
Fei Jiao, Qi Wang, Zuojian Pan, Bo Shen, Xin Xi, Chuhan Deng, Weihua Chen, Xiangning Kang, Guoyi Zhang, Zhizhong Chen, Yiyong Chen, Jinglin Zhan, Y.Z. Tong
Publikováno v:
Optics Express. 29:31594
In this study, we propose a low-cost, simple and feasible post-processing approach to improve the light extraction efficiency (LEE) of LED packages. Amorphous photonic structures (APSs) with only short-range order are fabricated from anodic aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c3931255c5b37266d994e2c56240bd0
https://doi.org/10.1364/oe.439857
https://doi.org/10.1364/oe.439857
Autor:
Jinglin Zhan, Y.Z. Tong, Zuojian Pan, Chuhan Deng, Qi Wang, Tongjun Yu, Fei Jiao, Shunfeng Li, Jingxin Nie, Xin Xi, Chengcheng Li, Bo Shen, Zhizhong Chen, Guoyi Zhang, Yiyong Chen, Xiangning Kang
Publikováno v:
Optics Express. 29:13219
Micro-LEDs can work under an extremely high injection level and are widely used in high-brightness micro-displays and visible light communication. With the increase of carrier concentration, many-body effects gradually become important factors affect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edeb900ffb8d3506fb10a58b1128c04f
https://doi.org/10.1364/oe.422151
https://doi.org/10.1364/oe.422151
Autor:
Peng Liu, Zelian Qin, Shengli Qi, Tongjun Yu, Zheng Chen, K. Xu, Xueda Hu, G. Y. Zhang, Y.Z. Tong
Publikováno v:
Journal of Crystal Growth. 298:731-735
In this work, InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) wafer with two emission peaks were grown by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), Ruthford backscattering (RBS), cathodoluminescence (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be447449d9ae8b727f02df09d017b210
https://doi.org/10.1016/j.jcrysgro.2006.10.167
https://doi.org/10.1016/j.jcrysgro.2006.10.167
Autor:
Bing Zhang, Xueda Hu, X. Y. Zhou, Zelian Qin, Zheng Chen, Tongjun Yu, Y.Z. Tong, G. Y. Zhang, Jing Zhao, Z. J. Yang, G. Q. Yao
Publikováno v:
physica status solidi (b). 241:2664-2667
The high-power white light emitting diode (LED) is packaged by GaN-based blue LED chip with the size of 1 x 1 mm 2 , YAG:Ce yellow fluorescer, epoxy and an effective heat sinking. The wavelength of the LED chip emission blue-shifts from 482 to 475 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef8e333b97198b858944d1f972c8641
https://doi.org/10.1002/pssb.200404977
https://doi.org/10.1002/pssb.200404977
Publikováno v:
Materials Science and Engineering: B. 111:36-39
The thermal annealing effects on Ti/Al/Ni/Au Ohmic contact to n-GaN are investigated by current–voltage (I–V) characteristics and transmission line method (TLM) measurements. The cladding layer of Ni/Au on Ti/Al plays two roles: preventing inter-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d81254d5b46370db9032d06c5090b10
https://doi.org/10.1016/j.mseb.2004.03.014
https://doi.org/10.1016/j.mseb.2004.03.014
Autor:
Shengqiang Zhou, M.F. Wu, Tongjun Yu, L.N. Hou, R. Nie, S.D. Yao, G. Y. Zhang, H.J. Ma, Y.Z. Tong, Z. J. Yang
Publikováno v:
Journal of Crystal Growth. 263:35-39
In this paper, an approach to determine the average In composition in InGaN/GaN multiple quantum wells (MQWs) was suggested. The period thickness and the average lattice constants (〈aepi〉 and 〈cepi〉) of MQWs were calculated from high-resoluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a06ea5d3c3d32108c6134aa2497c706
https://doi.org/10.1016/j.jcrysgro.2003.11.046
https://doi.org/10.1016/j.jcrysgro.2003.11.046
Publikováno v:
Physica B: Condensed Matter. 344:292-296
InGaN/GaN layers have been grown under low pressure by metal-organic vapor phase epitaxy on sapphire substrate. X-ray diffraction (XRD), photoluminescence, and optical absorption measurements have been performed to study the radiative recombination m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc6a5dae9e81b2c7efcdfe4c97beecf
https://doi.org/10.1016/j.physb.2003.10.008
https://doi.org/10.1016/j.physb.2003.10.008
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Z. J. Yang, Tongjun Yu, Y.Z. Tong, G. Y. Zhang, X.M. Ding, Zheng Chen, Zelian Qin, Bing Zhang, Xueda Hu
Publikováno v:
physica status solidi (c). :2189-2192
Current–voltage (I–V) characteristics, transmission line method (TLM), and optical transmittance measurements are performed to investigate the effects of thermal oxidation and plasma-induced oxidation treatments on Ni/Au contacts to p-type GaN. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e1b3efd4eb410e3806c453b2ad36a70
https://doi.org/10.1002/pssc.200303471
https://doi.org/10.1002/pssc.200303471