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pro vyhledávání: '"Y.W. Goh"'
Akademický článek
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Akademický článek
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Autor:
E. Hendarto, P.K. Tan, J.L. Cai, Hao Tan, Zhihong Mai, S.L. Toh, Q.F. Wang, J. Lam, Y.W. Goh, L.C. Hsia, Q. Deng
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:387-393
This paper highlights the use of a localized probing technique, nanoprobing, to reveal some of the subtle defects affecting the yield of integrated circuits in the nanometer generation nodes. The tool is equipped with the capability to isolate and ch
Akademický článek
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Autor:
W.Y. Lee, Lei Zhu, Ran He, Y.Z. Ma, H.L. Li, G.R. Low, Qiushi Wang, Y.W. Goh, Jeffrey Lam, Zhihong Mai, Q. Deng, S.L. Toh, Hao Tan, Pik Kee Tan
Publikováno v:
International Symposium for Testing and Failure Analysis.
Electrical Test (ET) structures are used to monitor the health and yield of a process line. With the scaling down of semiconductor devices to nanometer ranges, the number of metal lines and vias increase. In order to simulate the electrical performan
Autor:
J. Lam, H. Tan, Z.H. Mai, P.K. Tan, E. Hendarto, Q.F. Wang, Q. Deng, Y.W. Goh, L. Zhu, H.B. Lin, H.L. Li, R. He, S.L. Toh, J. Sudijono
Publikováno v:
International Symposium for Testing and Failure Analysis.
Electrical characterizations were needed to identify the root cause of leakage issues in IC devices. The methodology required was dependent on the failure mode obtained during testing and global or nano-scale isolations had to be implemented accordin
Autor:
H. Tan, Z.H. Mai, H.B. Lin, H.L. Li, R. He, Q. Deng, L. Zhu, J. Sudijono, J. Lam, S.L. Toh, E. Hendarto, P.K. Tan, Y.W. Goh
Publikováno v:
International Symposium for Testing and Failure Analysis.
The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages,
Autor:
Jeffrey Lam, L. Zhu, Y.W. Goh, R. He, S.L. Toh, Q.F. Wang, H. Tan, H.B. Lin, Liang-Choo Hsia, P.K. Tan, Zhihong Mai, E. Hendarto, Q. Deng
Publikováno v:
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Ni diffusion in sub-100 nm devices can adversely affect electrical performance, and contribute greatly to yield loss. Despite the tremendous advantages of Ni salicide technology over Ti or Co, there are problems associated with the intrinsic properti
Autor:
H.L. Li, J.L. Cai, Q.F. Wang, H. Tan, R. He, Q. Deng, J. Lam, Z.H. Mai, P.K. Tan, Y.W. Goh, H.B. Lin, Y.Z. Ma, J. Yu, E. Hendarto, L. Zhu, S.L. Toh
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the scaling down of semiconductor devices to nanometer range, physical failure analysis (PFA) has become more challenging. In this paper, a different method of performing PFA to identify a physical vertical short of intermetal layer in nanoscale
Publikováno v:
International Symposium for Testing and Failure Analysis.
As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective si