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Autor:
S. Lee, D.-Y.R. Ryu
Publikováno v:
Toxicology Letters. 295:S197
Autor:
Starodubtseva, Natalia1,2 (AUTHOR) alisa.tokareva@phystech.edu, Tokareva, Alisa1 (AUTHOR) a_kononihin@oparina4.ru, Kononikhin, Alexey1 (AUTHOR) agb.imbp@gmail.com, Brzhozovskiy, Alexander1 (AUTHOR) a_bugrova@oparina4.ru, Bugrova, Anna1,3 (AUTHOR) e_kukaev@oparina4.ru, Kukaev, Evgenii1,4 (AUTHOR) k_muminova@oparina4.ru, Muminova, Kamilla1 (AUTHOR) a_nahabina@oparina4.ru, Nakhabina, Alina1 (AUTHOR) v_frankevich@oparina4.ru, Frankevich, Vladimir E.1,5 (AUTHOR) g_sukhikh@oparina4.ru, Nikolaev, Evgeny6 (AUTHOR) ennikolaev@gmail.com, Sukhikh, Gennady1 (AUTHOR)
Publikováno v:
International Journal of Molecular Sciences. Oct2024, Vol. 25 Issue 19, p10653. 20p.
Publikováno v:
Journal of Crystal Growth. 261:502-507
For growth of metal oxide materials, we introduce hybrid beam deposition (HBD) as a novel growth technique. The HBD is developed by modified techniques out of pulsed laser deposition (PLD), molecular beam epitaxy (MBE), and chemical vapor deposition
Publikováno v:
Journal of Crystal Growth. 219:419-422
For the first time homostructural zinc-oxide (ZnO)-based p–n juctions are successfully fabricated. As-doped ZnO films are used for the p-type sides and Al-doped ZnO films for the n-type sides of p–n junctions. ZnO films have been deposited on p-t
Publikováno v:
Scopus-Elsevier
ZnO films were synthesized on GaAs substrates at different growth conditions by pulse laser deposition. High-purity (99.999%) oxygen was used as the ambient gas. The pressure of the ambient oxygen gas for ZnO film growth was varied from 20 to 50 mTor
Publikováno v:
Journal of Crystal Growth. 216:326-329
ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2 O 3 substrates. The properties of ZnO films on GaAs and α-Al 2 O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO film
Publikováno v:
Journal of Crystal Growth. 216:330-334
p-Type ZnO obtained by arsenic (As) doping is reported for the first time. Arsenic-doped ZnO (ZnO : As) films have been deposited on (0 0 1)-GaAs substrates by pulsed laser ablation. The process of synthesizing p-type ZnO : As films was performed in
Publikováno v:
Applied Surface Science. :496-499
ZnSe and ZnO films have been deposited on (001) GaAs substrates under different pressures by pulsed-laser deposition (PLD) with a 193 nm laser beam. The ambient pressures were changed from 8 X 10 -6 to 5 X 10 -2 Torr with high-purity argon gas for Zn
Autor:
Jiménez-Cortegana, Carlos1 (AUTHOR) cjcortegana@gmail.com, López-Enríquez, Soledad1 (AUTHOR) slopez9@us.es, Alba, Gonzalo1 (AUTHOR) galbaj@us.es, Santa-María, Consuelo2 (AUTHOR) csm@us.es, Martín-Núñez, Gracia M.3 (AUTHOR) graciamaria_mn@hotmail.com, Moreno-Ruiz, Francisco J.4 (AUTHOR) javier.morenoruiz@gmail.com, Valdés, Sergio5,6 (AUTHOR) sergio.valdes@hotmail.es, García-Serrano, Sara5,6 (AUTHOR) garciasara79@hotmail.com, Rodríguez-Díaz, Cristina7 (AUTHOR) cris.rdrz@gmail.com, Ho-Plágaro, Ailec7 (AUTHOR) ailec_hp@hotmail.com, Fontalba-Romero, María I.5 (AUTHOR) mariafontalba82@gmail.com, García-Fuentes, Eduardo7,8,9 (AUTHOR) eduardo.garcia@ibima.eu, Garrido-Sánchez, Lourdes3,10 (AUTHOR) lourgarrido@gmail.com, Sánchez-Margalet, Víctor1,11 (AUTHOR) margalet@us.es
Publikováno v:
International Journal of Molecular Sciences. Jul2024, Vol. 25 Issue 14, p7549. 11p.