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The Thermal Characteristics of Invar 36 Alloy during Plane Grinding

Autor: Y.P. Qiao, Zhuji Jin, Hang Gao, Renke Kang

Publikováno v: Advanced Materials Research. :918-921

Invar 36 alloy is widely used in the field of precision manufacturing owing to its minimal thermal expansion coefficient. Grinding is very important in Invar surface processing, and the thermal characteristics is a key factor to affect the residual s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::060e209d0bf3bac11b26cc3a8d55c0d4
https://doi.org/10.4028/www.scientific.net/amr.97-101.918

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The Characteristics of Surface Residual Stresses by Plane Grinding Invar and the Effects of Them on Structural Stability

Autor: Y.P. Qiao, Renke Kang, Dongming Guo, Zhuji Jin

Publikováno v: Advanced Materials Research. :293-298

Invar 36 alloy is widely used in manufacturing instruments because of its minimal thermal expansion coefficient. As an important material for the components of precision or super-precision instruments, the process methods for Invar and the structure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca29df852bbe48876b1908410de90592
https://doi.org/10.4028/www.scientific.net/amr.53-54.293

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Hole-injection mechanisms of organic light emitting diodes with Si anodes

Autor: G L Ma, Wei Zhao, G Z Ran, Y.P. Qiao, G. G. Qin, Yong Xu, L. Dai, Bingxin Zhang

Publikováno v: Semiconductor Science and Technology. 21:740-743

We have studied the hole-injection mechanisms of two types of Si anodes, polycrystalline Si (poly-Si) film and crystal Si (c-Si) wafer anodes, in organic light emitting diodes (OLEDs) and those of OLEDs with indium tin oxide anodes. It was found that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5006489d4c910753e71dbec90a618f4a
https://doi.org/10.1088/0268-1242/21/6/005

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Novel transparent Yb-based cathodes for top-emitting organic light emitting devices with high performance

Autor: B. R. Zhang, Wei Zhao, G. G. Qin, A.G. Xu, G L Ma, G Z Ran, Y.P. Qiao, S.K. Wu

Publikováno v: Applied Surface Science. 252:3580-3584

We have studied three kinds of transparent low-work-function Yb-based cathodes for the top-emitting organic light emitting devices (TEOLEDs) with a structure of ITO/NPB/Alq(3)/cathodes and compared them with each other. For the Yb/Au cathodes, a seri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d21bb73eb34c4dafb0988c516e3230ac
https://doi.org/10.1016/j.apsusc.2005.05.026

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Experimental study of the organic light emitting diode with a p-type silicon anode

Autor: Y.P. Qiao, L. Dai, A.G. Xu, G.Z. Ran, G. G. Qin, B.R. Zhang, W.X. Chen, G L Ma

Publikováno v: Thin Solid Films. 496:665-668

We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/AU Cathode. The luminance of the OLED i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8bd4cdf4cd2a75b214d9bee327a7f93
https://doi.org/10.1016/j.tsf.2005.09.027

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Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode

Autor: A.G. Xu, Y.P. Qiao, G.Z. Ran, Bei Zhang, Yong Xu, G L Ma, G. G. Qin, B. R. Yang, Z. L. Wu

Publikováno v: physica status solidi (a). 203:428-434

For the top-emission organic light-emitting diode (TOLED) with a structure of p-Si/SiOx/N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (AlQ)/Sm/Au, we found the resistivity of the p-Si anode has a gr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6c19d932eac95c1a6a7b65a1d190bdd
https://doi.org/10.1002/pssa.200521249

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Organic light-emitting diodes with n-type silicon anode

Autor: G.Z. Ran, G L Ma, A.G. Xu, W.X. Chen, G. G. Qin, Y.P. Qiao, Yong Xu

Publikováno v: Semiconductor Science and Technology. 20:761-764

In an AIQ-based bilayer organic light-emitting diode, n-type silicon has been used as an anode, and semitransparent metals Sm (15 nm)/Au (15 nm) as a cathode. This device has much smaller currents at high voltages (> 8 V) and a higher turn-on voltage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f597d898b1e09c2383341f7090cb72e2
https://doi.org/10.1088/0268-1242/20/8/019

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Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode

Autor: S.K. Wu, B. R. Yang, Y.P. Qiao, Guogang Qin, G L Ma, A.G. Xu, G.Z. Ran, Z. L. Wu

Publikováno v: Chemical Physics Letters. 400:401-405

An indium-tin oxide anode was replaced with a p-type silicon anode in a bilayer small-molecule organic light-emitting diode. As results, the current increased largely due to the enhanced hole injection and the higher conductivity of the Si anode; the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb81fd2edbd201024f54232af5f19f21
https://doi.org/10.1016/j.cplett.2004.10.147

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Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Autor: F.C. Yuan, L. Dai, W.H. Zong, Yong Chen, G.Z. Ran, Y.P. Qiao, Z.C. Ma, G. G. Qin

Publikováno v: Thin Solid Films. 409:194-197

Er-doped Si-rich SiO 2 (SRSO:Er) films with excess silicon contents of 0, 10, 20 and 30% were deposited on p-Si substrates using the magnetron sputtering technique, and then Au/SRSO:Er/p-Si light-emitting diodes (LEDs) were fabricated after the SRSO:

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::075f7d0e86efe5e6dccee55804d09850
https://doi.org/10.1016/s0040-6090(02)00069-x

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