Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Y.L. Tsang"'
Autor:
Parker Y.L. Tsang, Sunny L.H. Chu, Libby C.W. Li, Deborah M.S. Tai, Berry K.C. Cheung, Firaol Tamiru Kebede, Pete Y.M. Leung, Winston Wong, Teresa Chung, Cyril C.Y. Yip, Rosana Y.S. Poon, Jonathan Chen, Kwok-Yung Yuen, Manson Fok, Johnson Y.N. Lau, Lok-Ting Lau
Publikováno v:
IEEE Journal of Translational Engineering in Health and Medicine. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f662fe8bb8c0f23e88b0556f956f1e06
https://doi.org/10.1109/jtehm.2022.3230716
https://doi.org/10.1109/jtehm.2022.3230716
Autor:
Anthony O'Neill, Hiran Ramakrishnan, Enrique Escobedo-Cousin, Sarah H. Olsen, Suresh Uppal, Y.L. Tsang, Sanatan Chattopadhyay
Publikováno v:
IEEE Transactions on Electron Devices. 54:3040-3048
In this paper, an analytical model of threshold voltage for globally strained Si/SiGe CMOS devices using a dual channel architecture is proposed. Since band parameters modify , they are calculated and generalized for different Ge contents in a film g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ad3c87e88fb997b4eb00f56c52c115
https://doi.org/10.1109/ted.2007.907190
https://doi.org/10.1109/ted.2007.907190
Autor:
Per-Erik Hellström, Anthony O'Neill, JB Varzgar, Mikael Östling, Erich Kasper, Klara Lyutovich, Suresh Uppal, Y.L. Tsang, Sarah H. Olsen, Mehdi Kanoun, Sanatan Chattopadhyay, Enrique Escobedo-Cousins, Jonas Edholm, Michael Oehme
Publikováno v:
Materials Science and Engineering: B. 135:203-206
The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exh ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a34e5c9debbf6e03fed5df7cde1c4ac
https://doi.org/10.1016/j.mseb.2006.08.005
https://doi.org/10.1016/j.mseb.2006.08.005
Publikováno v:
Respiratory Medicine. 100:1356-1359
Summary Aim To compare the estimated size of spontaneous pneumothoraces using the established Rhea inter-pleural distances method with the CT-derived Collins method. Method Adult patients with spontaneous pneumothorax treated conservatively were iden
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ec90ef55433f83dde42279d95aaf140
https://doi.org/10.1016/j.rmed.2005.11.022
https://doi.org/10.1016/j.rmed.2005.11.022
Autor:
Steve Bull, Y.L. Tsang, Sanatan Chattopadhyay, R Agaiby, Anthony O'Neill, K.S.K. Kwa, Sarah H. Olsen, P. Dobrosz, Goutam Kumar Dalapati
Publikováno v:
IEEE Transactions on Electron Devices. 53:1142-1152
Surface channel strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrates (VSs) have been established as an attractive avenue for extending Si CMOS performance as dictated by Moore's law. The performance of a surface channel Si n-MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a04de561ec5bb13eab10e16af8638042
https://doi.org/10.1109/ted.2006.872086
https://doi.org/10.1109/ted.2006.872086
Publikováno v:
IEEE Electron Device Letters. 29:1062-1064
The piezoresistance model has commonly been used to describe mobility enhancement for low levels of process induced strain in CMOS technology. However, many reports show it failing to describe the superlinear behavior observed at high levels of stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694463693a6896c2dd6b81ed68f3270e
https://doi.org/10.1109/led.2008.2001682
https://doi.org/10.1109/led.2008.2001682
Autor:
Y.L. Tsang, Kuan-Yu Fu
Publikováno v:
IEEE Transactions on Electron Devices. 44:847-855
As the channel length of MOS transistors reduces to the submicron dimension, the punchthrough becomes more of a surface-initiated and gate-controlled phenomenon. A surface diffusion current (I/sub sdif/) originates from the injection of minority carr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a36c27f6997eadb5e2d36fc7ca3058b
https://doi.org/10.1109/16.568048
https://doi.org/10.1109/16.568048
Conference
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Autor:
A.F. Scaduto, Y.L. Tsang
Publikováno v:
IEEE Transactions on Electron Devices. 39:2127-2131
The fabrication process, device profiles, and electrical characteristics of an advanced bipolar transistor with a two-step ion-implanted base (TSIB) are described. This base implant scheme has achieved a significant collector-emitter leakage yield im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f082545ad39e25ce7873f294176d3125
https://doi.org/10.1109/16.155904
https://doi.org/10.1109/16.155904
Autor:
Y.L. Tsang, J.M. Aitken
Publikováno v:
IEEE Transactions on Electron Devices. 38:2134-2138
Junction breakdown voltage instability in a p-n junction formed in bulk silicon adjacent to a deep trench filled with polysilicon was investigated. The structure investigated consists of a 5- mu m-deep trench filled with heavily p-doped polysilicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1617001547d8fe7aded42c178f99050
https://doi.org/10.1109/16.83741
https://doi.org/10.1109/16.83741