Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Y.K. Yoğurtçu"'
Publikováno v:
Journal of Crystal Growth. 279:110-113
Unintentionally doped p-type Ga 2 Te 3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman–Stockbarger crystal growth method. The switching effect of the compound has been investigated at various tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba6dc38f0fd68f6006c7b9a40d49668c
https://doi.org/10.1016/j.jcrysgro.2005.01.106
https://doi.org/10.1016/j.jcrysgro.2005.01.106
Publikováno v:
Semiconductor Science and Technology. 19:523-530
p-type GaTe single crystals have been grown using the directional freezing method with different growth rates. Temperature-dependent Hall effect and resistivity measurements were carried out in the 80–325 K temperature range and at 1.6 T magnetic f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1e327c71955dad0d96ca5ae03f60600
https://doi.org/10.1088/0268-1242/19/3/043
https://doi.org/10.1088/0268-1242/19/3/043
Publikováno v:
Semiconductor Science and Technology. 18:75-81
The current–voltage (I–V) characteristics of Cd/p-GaTe Schottky barrier diodes were measured in the temperature range 90–330 K. The apparent barrier height and the ideality factor derived by using thermionic emission (TE) theory were found to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e493dbe2fc5fecde663648e2db785a
https://doi.org/10.1088/0268-1242/18/2/302
https://doi.org/10.1088/0268-1242/18/2/302
Publikováno v:
physica status solidi (b). 227:469-476
The dependence of the absorption coefficient on the photon energy and sample temperature near the fundamental absorption edge (AE) was investigated for TlGaS 2 layered semiconductor crystals. The exponential absorption tails observed in the 10-340 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9af5c61f41a8057ffbd908ef1c0ece5
https://doi.org/10.1002/1521-3951(200110)227:2<469::aid-pssb469>3.0.co
https://doi.org/10.1002/1521-3951(200110)227:2<469::aid-pssb469>3.0.co
Publikováno v:
Semiconductor Science and Technology. 16:745-749
The photoluminescence (PL) spectra of Tl2GaInSe4 layered single crystals has been investigated in the 10-95 K temperature, 0.04-3.98 W cm-2 excitation laser intensity and 1.75-2.07 eV energy ranges. We have observed an emission band located at 1.912
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1abd56642aae924328c7a2a8c49fbaa6
https://doi.org/10.1088/0268-1242/16/9/302
https://doi.org/10.1088/0268-1242/16/9/302
Publikováno v:
Journal of Luminescence. 93:243-248
Radiative recombination mechanisms in GaTe single crystals have been investigated as a function of temperature and excitation laser intensity in the energy region of 1.5–1.8 eV. Three emission bands have been observed located at 1.781 (A band), 1.7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86de18f90a6f150d2f941e9fbbe10de8
https://doi.org/10.1016/s0022-2313(01)00192-2
https://doi.org/10.1016/s0022-2313(01)00192-2
Publikováno v:
Physica Scripta. 62:92-96
Magnetoresistance and Hall effect measurements were carried out for Ho doped n-InSe (n-InSe:Ho) sample in the temperature range 10–340 K, in which the sample exhibits transverse magnetoresistance (MJ⊥B) and longitudinal magnetoresistance (MJ//B)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc20c974a9f98212ff0053bb7e178a85
https://doi.org/10.1238/physica.regular.062a00092
https://doi.org/10.1238/physica.regular.062a00092
Publikováno v:
Semiconductor Science and Technology. 15:535-541
Optical absorption spectra of GaSe and GaSe:Gd single crystals were investigated in the excitonic resonance energy region and just below. Free exciton (FE) transitions associated with the direct gap of GaSe and GaSe:Gd have been measured as a functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c66927b68948dbea0b7ffe3d051efc
https://doi.org/10.1088/0268-1242/15/6/308
https://doi.org/10.1088/0268-1242/15/6/308
Publikováno v:
Microelectronic Engineering. :689-693
An investigation of metallic polypyrrole polymer (MPP)/ n -InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved n -type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81b0abc4932533e7d20614bfdb66bb72
https://doi.org/10.1016/s0167-9317(99)00532-8
https://doi.org/10.1016/s0167-9317(99)00532-8
Publikováno v:
Journal of Physics D: Applied Physics. 32:2942-2948
Optical absorption spectra of InSe and InSe:Er single crystals were investigated just below and in the excitonic resonance energy region. The temperature dependence of the free exciton transition associated with the direct gap of InSe and InSe:Er wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8933e23513abbaea97a233937306fe5
https://doi.org/10.1088/0022-3727/32/22/317
https://doi.org/10.1088/0022-3727/32/22/317