Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Y.K. Ha"'
Publikováno v:
CIRED Porto Workshop 2022: E-mobility and power distribution systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b6f36360d5887b39f75ed6186cb68c3
https://doi.org/10.1049/icp.2022.0775
https://doi.org/10.1049/icp.2022.0775
Autor:
K.T. Nam, Jun-Soo Bae, H.S. Kim, Nae-In Lee, H. K. Kang, Y.K. Ha, U-In Chung, Se-Chung Oh, Ji Eun Lee, Hoonki Kim, S.O. Park, June Moon
Publikováno v:
IEEE Transactions on Magnetics. 41:2661-2663
Toggle switching mode MRAM is tested and characterized with respect to the free- and pinned-layer material and thickness. With magnetization curves, we were able to find the optimum thickness combinations of free-layer and spacer materials. For CoFeB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd9c3855b264f05efca1b719838aaf09
https://doi.org/10.1109/tmag.2005.854935
https://doi.org/10.1109/tmag.2005.854935
Autor:
Y. Rho, J.S. Bae, Y.K. Ha, I.G. Baek, H.-J. Kim, JongChul Lee, J.T. Moon, U.-I. Chung, S.O. Park, S.C. Oh
Publikováno v:
IEEE Transactions on Magnetics. 40:2275-2277
Dependence of magnetic tunnel junction (MTJ) properties on seed layer, surface treatment and magnetic materials was investigated to improve TMR ratio. Roughness of tunnel oxide layer generated from seed layer roughness reduces TMR ratio as well as RA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d321c1402dec6b570dad5d717e61910
https://doi.org/10.1109/tmag.2004.828968
https://doi.org/10.1109/tmag.2004.828968
Autor:
J.T. Moon, J.E. Lee, Hoonki Kim, H.K. Kang, U-In Chung, S.O. Park, I.G. Baek, J.S. Bae, N.I. Lee, S.C. Oh, Y.K. Ha
Publikováno v:
IEEE Transactions on Magnetics. 40:2616-2618
The dependence of the switching field distribution of magnetic random access memory cells on film roughness, saturation magnetization, film thickness, and cell aspect ratio is discussed. We found that a flat interface between the tunnel oxide and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc24a2a4c7d15680cbf94b0874298935
https://doi.org/10.1109/tmag.2004.829813
https://doi.org/10.1109/tmag.2004.829813
Autor:
H.-J. Kim, Y.K. Ha, S.C. Oh, J.S. Bae, K.T. Nam, J.E. Lee, S.O. Park, H.S. Kim, N.I. Lee, U.-I. Chung, J.T. Moon, H.K. Kang
Publikováno v:
INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd796f80610b8ae520671afc83386bac
https://doi.org/10.1109/intmag.2005.1463847
https://doi.org/10.1109/intmag.2005.1463847
Autor:
Hyung-Gon Kim, Ji Eun Lee, June Moon, Se-Chung Oh, U-In Chung, S.O. Park, Hoonki Kim, Y.K. Ha, Jun-Soo Bae, K.T. Nam
Publikováno v:
INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..
The simple stacking structure such as [Sub/Zr/AlO/sub x//NiFe (or CoFeB)/capping layer] was prepared to investigate the changes of magnetic properties of free layer with annealing temperature. Ta, Ru, or Zr was used as the capping layer. Samples were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2df72d9ffbd42ee2adad73c62463d28
https://doi.org/10.1109/intmag.2005.1463670
https://doi.org/10.1109/intmag.2005.1463670
Autor:
Y.K. Ha, In-Gyu Baek, June Moon, J.E. Lee, Se-Chung Oh, S.O. Park, Hoonki Kim, J.S. Bae, Ho-Kyu Kang, U. I. Chung, Nae-In Lee
Publikováno v:
IEEE International Electron Devices Meeting 2003.
The key factors to improve the switching characteristics are systematically analyzed to develop high density MRAM with a reliable operating margin. We demonstrated that roughness control of MTJ films, choice of free layer materials with small Ms, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5831bf9973df88a111fb261d0e2377
https://doi.org/10.1109/iedm.2003.1269408
https://doi.org/10.1109/iedm.2003.1269408
Autor:
Nae-In Lee, Ho-Kyu Kang, K.T. Nam, Jun-Soo Bae, June Moon, U-In Chung, Se-Chung Oh, Y.K. Ha, J.E. Lee, Hoonki Kim, S.O. Park
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
Magnetic random access memory (MRAM) with magnetic tunnel junction (MTJ) using synthetic anti-ferromagnetic (SAF) free layers of various shapes has been developed. SAF free layers show the predominance in the scalability compared with a conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96392970a13fb74200a76d8a938c8bbe
https://doi.org/10.1109/vlsit.2004.1345371
https://doi.org/10.1109/vlsit.2004.1345371
Publikováno v:
Poultry Science, Vol 99, Iss 1, Pp 597-603 (2020)
ABSTRACT: The objective of this study was to determine the impact of pre-rigor salting using KCl on the technological properties of ground chicken breast. Chicken breast muscle (M. pectoralis major and minor) was hot-debonded and salted with 2% NaCl
Externí odkaz:
https://doaj.org/article/62dee34bb27a44479a0f916d30d435dd
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