Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Y.K. Brown"'
Autor:
Joseph F. Jensen, Charles H. Fields, T.P.E. Broekaert, Binqiang Shi, D.L. Persechini, Y.K. Brown-Boegeman, R.H. Walden, D. Yap, S. Bourgholtzer
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1335-1342
A monolithically integrated optical receiver and a 4-bit flash analog-to-digital converter, all in InP HBT technology, have been implemented. The optical receiver converts an incoming optical pulse train into an electronic signal and is functional up
Publikováno v:
IEEE Photonics Technology Letters. 13:626-628
A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic d
Autor:
Y-M. Xie, C. Chew, Bahram Jalali, K. Warbrick, D. Pollex, M. Kardos, C. Dreze, Robert H. Walden, A.R. Kramer, R. Cordell, A.E. Schmitz, H.C. Sun, Joseph L. Pikulski, J. Sitch, G.K. Chang, M. Hafizi, Y.K. Brown, W.E. Stanchina
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
An eight-channel optical receiver front-end array has been designed and fabricated using InP-based HBT, IC technology. The 2.5 Gb/s circuits include photodetectors constructed from HBT base-collector junctions, transimpedance amplifiers, and differen
Autor:
Charles H. Fields, Donald A. Hitko, M. Case, J.A. Henige, Joseph F. Jensen, M. Lui, A.R. Kramer, D.P. Docter, Marko Sokolich, Y.K. Brown, Gopal Raghavan
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
Using experimental data and a sum of weighted RC time constant model we optimized AlInAs/GaInAs SHBT devices for minimum gate delay in a static divider. The best result obtained, a 55 GHz maximum clock rate, is to our knowledge the highest toggle rat
Autor:
E.L.H. Amundsen, M.M. Sokolich, B.A. Randall, Barry K. Gilbert, J.A. Henige, W.L. Walters, Y.K. Brown, D.J. Schwab, M.M. Lui, A.D. Nielsen
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an indium phosphide (InP) scaled heterojunction bipolar transistor (HBT) technology which has the potentia
Publikováno v:
Applied Physics Letters. 64:3261-3263
AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) have been made with an InP collector thickness of 0.75 μm and collector dopings of 1.4, 2.4, and 3×1016 cm−3. It is shown that because of the conduction band potential barrier be
Autor:
Joseph F. Jensen, J. Duvall, S. Thomas, William E. Stanchina, Charles H. Fields, D.P. Docter, M.M. Lui, R. Martinez, A.R. Kramer, Y.K. Brown, D.A. Ahmari, Marko Sokolich
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).
We have demonstrated a 52.9 GHz static 1/8 divider in an AlInAs/InGaAs HBT technology. To our knowledge this is the fastest static divider reported in any semiconductor technology. The divider was realized in a high yield optical lithography triple m
Publikováno v:
1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers.
Optoelectronic Integrated Circuit (OEIC) receivers have been demonstrated for analog rf-photonic links. The photodetector and preamplifier are both based on the same InGaAs/InAlAs/InP heterojunction bipolar transistor structure. On-chip AC-coupling f
Autor:
M.E. Montes, Mark J. W. Rodwell, Y.K. Brown, M. Hafizi, K. Elliott, M. Kardos, Gopal Raghavan, William E. Stanchina, Joseph F. Jensen, H.-C. Sun, R.H. Walden, M.W. Yung
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.
The authors designed and fabricated a highly integrated and very low power receiver IC for 2.5 Gb/s optical communication. It consisted of an AGC data recovery circuit and demultiplexer, and consumed only 340 mW power. The measured data have validate
Autor:
M. Hafizi, M. Kardos, K. Elliott, M.E. Montes, Adele E. Schmitz, T. Liu, William E. Stanchina, Joseph F. Jensen, H.-C. Sun, R.H. Walden, Y.K. Brown, M.W. Yung, C. Raghavan
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the past several years. This paper describes the extension of that HBT IC technology to an IC fabr