Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Y.K. Allen"'
Autor:
T.V. Kargodorian, Y.K. Allen, M.W. Pierce, R. J. Ferro, William E. Stanchina, R.A. Metzger, Joseph F. Jensen, Robert G. Wilson, David B. Rensch
Publikováno v:
Solid-State Electronics. 34:1319-1324
We investigated the electron injection process for high-speed N-p-n AlInAs/GaInAs HBTs by measuring collector and base currents as a function of base-emitter voltage with collector-base voltage equal to zero (Gummel plots) at temperatures from 77 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6093a9a114a061dd9c8fea0c87438de
https://doi.org/10.1016/0038-1101(91)90024-s
https://doi.org/10.1016/0038-1101(91)90024-s
Autor:
Y.K. Allen, M.W. Pierce, R.F. Lohr, R.A. Metzger, William E. Stanchina, P.F. Lou, Joseph F. Jensen, David B. Rensch, R.W. Quen
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:415-421
Integrated circuits (ICs) fabricated with AlGaAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates are described. The transistors used in this work consisted of an abrupt emitter-base junction design. A cutoff frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c6ffdc580d281c179fbca5695e029a1
https://doi.org/10.1109/4.75028
https://doi.org/10.1109/4.75028
Autor:
Y.K. Allen, David B. Rensch, William E. Stanchina, R.A. Metzger, T.V. Kargodorian, Mark J. W. Rodwell, Joseph F. Jensen, M.W. Pierce
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:1378-1382
Microwave cascode feedback amplifiers with 8.6-dB gain and DC to 33-GHz bandwidth were developed. The amplifiers utilize AlIn-As/GaInAs heterojunction bipolar transistors having f/sub max/=70 GHz and f/sub tau /=90 GHz. Because of the significant col
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59aab22fbd2df30153049f99cbcb5a38
https://doi.org/10.1109/4.90089
https://doi.org/10.1109/4.90089
Autor:
Y.K. Allen, T.V. Kargodorian, M. Lui, William E. Stanchina, P.A. Macdonald, W.W. Hooper, Takyiu Liu, David B. Rensch, M. Hafizi, F. Williams, R. Wong-Quen
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc0545d11ef61ae1bf87ccfb96b823cf
https://doi.org/10.1109/iciprm.1993.380721
https://doi.org/10.1109/iciprm.1993.380721
Autor:
Y.K. Allen, Joseph F. Jensen, T.V. Kargodorian, William E. Stanchina, David B. Rensch, R.A. Metzger, M.W. Pierce
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
4/5 and 8/9 dual-modulus prescalers are fabricated using AlInAs-GaInAs heterojunction bipolar transistors (HBTs) which operate at clock frequencies up to 9 GHz and which dissipate 700 mW and 900 mW, respectively. The transistor technology results in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38238df567610860da4afac59c232948
https://doi.org/10.1109/gaas.1990.175443
https://doi.org/10.1109/gaas.1990.175443
Autor:
R.A. Metzger, Y.K. Allen, Joseph F. Jensen, T.V. Kargodorian, William E. Stanchina, M.W. Pierce, David B. Rensch
Publikováno v:
IEEE Proceedings of the Custom Integrated Circuits Conference.
CML ring-oscillators and static frequency divider circuits implemented with AlInAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates are demonstrated. A cutoff frequency (f/sub t/) and a maximum frequency of oscillati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9ed92e55b8eb0f2446514f4984e9f1f
https://doi.org/10.1109/cicc.1990.124768
https://doi.org/10.1109/cicc.1990.124768
Autor:
R.A. Metzger, T.V. Kargodorian, William E. Stanchina, David B. Rensch, Joseph F. Jensen, M.W. Pierce, Mark J. W. Rodwell, Y.K. Allen
Publikováno v:
Proceedings on Bipolar Circuits and Technology Meeting.
Implemented with 70-GHz f/sub max/, 90-GHz f/sub tau / AlInAs/GaInAs devices, 8.6-dB gain and DC 33-GHz bandwidth were attained for a monolithic active-biased cascode bipolar feedback amplifier. Because of the significant collector-base feedback time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a32a24378664bc619437f19f2b431e
https://doi.org/10.1109/bipol.1990.171177
https://doi.org/10.1109/bipol.1990.171177
Publikováno v:
IEEE Electron Device Letters. 13:612-614
A static divide-by-4 frequency divider operating at 39.5 GHz with a corresponding gate delay of 12.6 ps was implemented using InP-based HBT technology. The AlInAs/GaInAs HBT devices utilized in the divider incorporated a graded emitter-base (E-B) jun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9574f79f1cd28636dcc3ba1313647963
https://doi.org/10.1109/55.192861
https://doi.org/10.1109/55.192861
Publikováno v:
1991 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8998328b0e838e85587a9fce66cb98fe
https://doi.org/10.1109/isscc.1991.689091
https://doi.org/10.1109/isscc.1991.689091
Autor:
J. E. Jensen, T.V. Kargodorian, Y.K. Allen, R.A. Metzger, Robert J. Ferro, M.W. Pierce, P.F. Lou, David B. Rensch, William E. Stanchina
Publikováno v:
SPIE Proceedings.
This paper describes the demonstration of CML ring-oscillators and static frequency divider circuits implemented with AlInAs/GalnAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates. A cutoff frequency (fT) and a maximum fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615acdca3770ba876772b3e023553d89
https://doi.org/10.1117/12.20907
https://doi.org/10.1117/12.20907