Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Y.H. Aliyu"'
Publikováno v:
Quality and Reliability Engineering International. 16:45-49
The reliability of AlGaInP double-heterostructure (DH) light-emitting diodes (LEDs) operating typically at 600 nm has been studied. To investigate degradation, accelerated aging at ambient temperatures of 50, 75 and 125°C has been carried out for ov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6298cb11e9eaf94f06c497c4daffe7a8
https://doi.org/10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co
https://doi.org/10.1002/(sici)1099-1638(200001/02)16:1<45::aid-qre302>3.0.co
Publikováno v:
Thin Solid Films. 312:268-272
The effects of post-deposition annealing in different atmospheres, on electrical and optical properties of sputtered and thermally evaporated indium tin oxide (ITO) films have been investigated. Significant variations in resistivity, mobility, carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adcf19d88c238cca424be1493da25ff
https://doi.org/10.1016/s0040-6090(97)00733-5
https://doi.org/10.1016/s0040-6090(97)00733-5
Publikováno v:
Measurement Science and Technology. 8:437-440
A technique for the rapid evaluation of the optical performance of wafers grown for fabricating visible-light-emitting diodes (LEDs) is presented. The technique is simple, non-destructive and can be used to qualify wafers prior to the relatively expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8311629b6a5784536a972f0857faa14e
https://doi.org/10.1088/0957-0233/8/4/011
https://doi.org/10.1088/0957-0233/8/4/011
Publikováno v:
Physica Status Solidi (a). 135:119-132
Selective ion bombardment damage was induced on n/n+ GaAs Schottky barrier solar cell structure using several proton energies and doses. The damage in the surface, interface, and the bulk regions were characterised by I—V, C—V, and thermally stim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b18b9a9b4cb49a15b333c9a4248ff89
https://doi.org/10.1002/pssa.2211350108
https://doi.org/10.1002/pssa.2211350108
Publikováno v:
Physica Status Solidi (a). 133:77-93
Indium-tin-oxide (ITO) is a wide band gap degenerately doped semiconductor which forms a rectifying heterojunction with GaAs. The interface exhibits electrical characteristics which parallel those of conventional metal/semiconductor Schottky diodes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d0fe859996d1ab84eeb7fb4b7c59091
https://doi.org/10.1002/pssa.2211330110
https://doi.org/10.1002/pssa.2211330110
Publikováno v:
Thin Solid Films. 258:283-285
The effects of proton damage on transparent conducting indium tin oxide (ITO) layers were investigated by electrical and optical techniques. ITO layers were found to be highly resistant to proton damage for fluences up to 10 16 ions cm −2 . For flu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::801667d1b61542d6f971d91ca82f5bef
https://doi.org/10.1016/0040-6090(94)06420-2
https://doi.org/10.1016/0040-6090(94)06420-2
Publikováno v:
Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.
Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e20ee91182d0014036cafea9c13ff15
https://doi.org/10.1109/edmo.1995.493699
https://doi.org/10.1109/edmo.1995.493699
Publikováno v:
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
Reactive thermally evaporated transparent conducting Indium-Tin-Oxide (ITO) layers are used as window material and current spreading layer on AlGaInP Light Emitting Diodes (LEDs). The sheet resistance of the ITO films deposited is of the order 4.5 oh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af62110bc9f6ded11b09ef979190ecd
https://doi.org/10.1109/cornel.1995.482523
https://doi.org/10.1109/cornel.1995.482523
Publikováno v:
Electronics Letters. 31:1691-1692
Reactive thermally evaporated transparent conducting indium tin oxide (ITO) layers are used as window material and for current spreading layers on AlGaInP light emitting diodes (LEDs). The sheet resistance of the ITO films deposited is of the order o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f502481dc752ceb69c33793a67d2889
https://doi.org/10.1049/el:19951132
https://doi.org/10.1049/el:19951132
Publikováno v:
Electronics Letters. 29:1991
Electrical and optical properties of high performance (AlxGa1−x)yIn1−yP light emitting diodes (LEDs) are described. The current transport mechanism is dominated by surface recombination. The orange diodes exhibit a lower surface recombination cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90018d78230bc12d3844bfbcdfc8649d
https://doi.org/10.1049/el:19931326
https://doi.org/10.1049/el:19931326