Zobrazeno 1 - 10
of 141
pro vyhledávání: '"Y.G. Xiao"'
Autor:
Y.H. Cao, F.Y. Fang, D. Yao, D.H. Yu, Y.H. Qian, B. Yu, Y.G. Xiao, G. D. Wu, Y.M. Wu, T.R. Yao, Y. Mao, J. Liu
Publikováno v:
Neoplasma. 67:692-699
Conditionally reprogrammed cell (CRC) technology is an effective method for culturing primary malignant cells and non-malignant epithelial cells in vitro. This can be useful for precision medicine applications, such as drug sensitivity assays. Howeve
Publikováno v:
Materials Science Forum. 787:247-255
A theoretical model for radiation effect in a metal-ferroelectric-semiconductor (MFS) field-effect transistor was proposed by considering the fixed charges (Qfx) and interface charges (Qit) induced by ionizing radiation. In this model, the energy ban
Autor:
Y.C. Zhou, H.Q. Cai, X.S. Lv, C.P. Cheng, B. Jiang, M.H. Tang, Y.G. Xiao, Z.H. Tang, L. Q. Li
Publikováno v:
Solid State Sciences. 17:35-39
A series of high quality Bi 3.15 Nd 0.85 TiO 3 (BNT) ferroelectric thin films and La 0.7 Ca 0.3 MnO 3 /Bi 3.15 Nd 0.85 TiO 3 (LCMO/BNT) multiferroic composite thin films were deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by chemical solution depo
Autor:
X.C. Gu, J.C. Li, Y.C. Zhou, Y. Xiong, X.S. Lv, M.H. Tang, Z.H. Tang, C.P. Cheng, B. Jiang, Y.G. Xiao, H.Q. Cai
Publikováno v:
Current Applied Physics. 12:1591-1595
The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converte
Autor:
J. He, W. Shu, G.J. Dong, Z.H. Sun, Y.G. Xiao, J. W. Hou, H.Y. Xu, W.F. Zhao, Jihua Zhang, M.H. Tang, Yu Zhou, Feng Yang
Publikováno v:
Solid State Communications. 149:806-809
Sol–gel derived magnesium-doped ferroelectric Ba0.4Sr0.6TiO3 (with Mg dopant to be 5 mol%, 10 mol%, and 15 mol% ) (BSMT) thin films are deposited on Pt(111)/Ti/SiO2/Si(100) substrate and annealed at 650 ∘C, 700 ∘C, and 750 ∘C, respectively. I
Publikováno v:
Journal of Lightwave Technology. 19:1010-1022
A theoretical model incorporating the mechanism of resonant absorption of the multiple reflected lightwaves is presented for the frequency response of resonant-cavity (RC) separate absorption, charge, and multiplication (SACM) avalanche photodiodes (
Publikováno v:
IEEE Transactions on Electron Devices. 48:661-670
Using a simplified time domain modeling approach, the temperature dependent performance characteristics, such as multiplication gain, breakdown voltage, -3 dB bandwidth, gain bandwidth product and excess noise factor, have been systematically investi
Publikováno v:
IEEE Journal of Quantum Electronics. 35:1853-1862
The two-dimensional (2-D) gain profiles for separate absorption, grading, charge and multiplication (SAGCM) InP-InGaAs avalanche photodiodes (APD's) have been modeled with a stochastic approach. To consider the influence of the curved diffusion edge
Publikováno v:
Physica C: Superconductivity. 224:240-246
The irreversibility lines in Cu-Nb in-situ formed composites have been investigated by DC magnetization measurements. Extended reversible regions are clearly identified in the H-T phase plane. The melting theory of the vortex lattice is found to desc
Publikováno v:
2009 13th International Workshop on Computational Electronics.
Crystalline silicon solar cells with laser-fired contact (LFC) are simulated with Crosslight APSYS and CSUPREM. Different laser firing parameters lead to different LFC profiles and different cell performances. It is shown that the cell efficiency can