Zobrazeno 1 - 10
of 470
pro vyhledávání: '"Y.G. Xiao"'
Autor:
Y.H. Cao, F.Y. Fang, D. Yao, D.H. Yu, Y.H. Qian, B. Yu, Y.G. Xiao, G. D. Wu, Y.M. Wu, T.R. Yao, Y. Mao, J. Liu
Publikováno v:
Neoplasma. 67:692-699
Conditionally reprogrammed cell (CRC) technology is an effective method for culturing primary malignant cells and non-malignant epithelial cells in vitro. This can be useful for precision medicine applications, such as drug sensitivity assays. Howeve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d709b3f349db3b114418efd003fd516
https://doi.org/10.4149/neo_2020_190730n690
https://doi.org/10.4149/neo_2020_190730n690
Publikováno v:
Materials Science Forum. 787:247-255
A theoretical model for radiation effect in a metal-ferroelectric-semiconductor (MFS) field-effect transistor was proposed by considering the fixed charges (Qfx) and interface charges (Qit) induced by ionizing radiation. In this model, the energy ban
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f114e395ad6c03d69a2d65b1aebfba
https://doi.org/10.4028/www.scientific.net/msf.787.247
https://doi.org/10.4028/www.scientific.net/msf.787.247
Autor:
Y.C. Zhou, H.Q. Cai, X.S. Lv, C.P. Cheng, B. Jiang, M.H. Tang, Y.G. Xiao, Z.H. Tang, L. Q. Li
Publikováno v:
Solid State Sciences. 17:35-39
A series of high quality Bi 3.15 Nd 0.85 TiO 3 (BNT) ferroelectric thin films and La 0.7 Ca 0.3 MnO 3 /Bi 3.15 Nd 0.85 TiO 3 (LCMO/BNT) multiferroic composite thin films were deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by chemical solution depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5b308eaee2ba18e6337c0be4f504af
https://doi.org/10.1016/j.solidstatesciences.2012.12.012
https://doi.org/10.1016/j.solidstatesciences.2012.12.012
Autor:
X.C. Gu, J.C. Li, Y.C. Zhou, Y. Xiong, X.S. Lv, M.H. Tang, Z.H. Tang, C.P. Cheng, B. Jiang, Y.G. Xiao, H.Q. Cai
Publikováno v:
Current Applied Physics. 12:1591-1595
The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed9326636c50dbada6a6cdbdb056e866
https://doi.org/10.1016/j.cap.2012.05.008
https://doi.org/10.1016/j.cap.2012.05.008
Autor:
J. He, W. Shu, G.J. Dong, Z.H. Sun, Y.G. Xiao, J. W. Hou, H.Y. Xu, W.F. Zhao, Jihua Zhang, M.H. Tang, Yu Zhou, Feng Yang
Publikováno v:
Solid State Communications. 149:806-809
Sol–gel derived magnesium-doped ferroelectric Ba0.4Sr0.6TiO3 (with Mg dopant to be 5 mol%, 10 mol%, and 15 mol% ) (BSMT) thin films are deposited on Pt(111)/Ti/SiO2/Si(100) substrate and annealed at 650 ∘C, 700 ∘C, and 750 ∘C, respectively. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4c625778fa0a4633ed78b20e1215c09
https://doi.org/10.1016/j.ssc.2009.02.038
https://doi.org/10.1016/j.ssc.2009.02.038
Autor:
Artemyev, Valentin1,2 (AUTHOR) artemev.vv@genlab.llc, Gubaeva, Anna1 (AUTHOR) devyatkin_aa@academpharm.ru, Paremskaia, Anastasiia Iu.1 (AUTHOR) mityaeva_on@academpharm.ru, Dzhioeva, Amina A.2 (AUTHOR), Deviatkin, Andrei1 (AUTHOR) vpwwww@gmail.com, Feoktistova, Sofya G.1 (AUTHOR) artemev.vv@genlab.llc, Mityaeva, Olga1,2,3 (AUTHOR), Volchkov, Pavel Yu.1,3,4 (AUTHOR)
Publikováno v:
Cells (2073-4409). Dec2024, Vol. 13 Issue 23, p1963. 25p.
Autor:
Qin, Limin1,2,3 (AUTHOR) qlimin@email.cugb.edu.cn, Lan, Xiaodong1,2,3 (AUTHOR) lansecup@163.com
Publikováno v:
Minerals (2075-163X). Oct2024, Vol. 14 Issue 10, p1034. 19p.
Publikováno v:
Journal of Lightwave Technology. 19:1010-1022
A theoretical model incorporating the mechanism of resonant absorption of the multiple reflected lightwaves is presented for the frequency response of resonant-cavity (RC) separate absorption, charge, and multiplication (SACM) avalanche photodiodes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ea9f844a2d0f437a843ab643b51dde8
https://doi.org/10.1109/50.933297
https://doi.org/10.1109/50.933297
Publikováno v:
IEEE Transactions on Electron Devices. 48:661-670
Using a simplified time domain modeling approach, the temperature dependent performance characteristics, such as multiplication gain, breakdown voltage, -3 dB bandwidth, gain bandwidth product and excess noise factor, have been systematically investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74738aedf58f809f9e66a4ae3e8ec558
https://doi.org/10.1109/16.915678
https://doi.org/10.1109/16.915678
Publikováno v:
IEEE Journal of Quantum Electronics. 35:1853-1862
The two-dimensional (2-D) gain profiles for separate absorption, grading, charge and multiplication (SAGCM) InP-InGaAs avalanche photodiodes (APD's) have been modeled with a stochastic approach. To consider the influence of the curved diffusion edge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef3d3c81d219de2d268d610c231532a
https://doi.org/10.1109/3.806597
https://doi.org/10.1109/3.806597