Zobrazeno 1 - 10
of 601
pro vyhledávání: '"Y.D. ZHENG"'
Autor:
Q.Z. HOU, X. PANG, K. SUN, J.Y. LIANG, L.Y. JIA, H.Q. FENG, T.S. ZHANG, Y.D. ZHENG, Y.P. WANG
Publikováno v:
Photosynthetica, Vol 57, Iss 2, Pp 533-539 (2019)
In the present work, treatment with AMP-PCP (β,γ-methyleneadenosine-5'-triphosphate - a competitive inhibitor of the extracellular ATP pool) or apyrase (an ATP-degrading enzyme) decreased the PSII operating efficiency (ΦPSII), photochemical quench
Externí odkaz:
https://doaj.org/article/4818309ee1594116b848e219a047f1de
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
X. Pang, Hanqing Feng, T.S. Zhang, Yu Wang, Lingyun Jia, Kun Sun, Q. Z. Hou, J. Y. Liang, Y.D. Zheng
Publikováno v:
Photosynthetica, Vol 57, Iss 2, Pp 533-539 (2019)
In the present work, treatment with AMP-PCP (β,γ-methyleneadenosine-5'-triphosphate - a competitive inhibitor of the extracellular ATP pool) or apyrase (an ATP-degrading enzyme) decreased the PSII operating efficiency (ΦPSII), photochemical quench
Autor:
P. Chen, Pengde Han, B. Liu, Hua Xuemei, Tao Tao, L. Yu, Y.D. Zheng, S. Fan, Hong Zhao, X.L. He, Zili Xie, R. Zhang, X.L. Ji, Xiangqian Xiu, X.Z. Chai, J.L. Li, Zhiguo Li
Publikováno v:
Thin Solid Films. 662:168-173
Cubic silicon carbide (3C-SiC) has been grown on Si (111) substrate by chemical vapor deposition. The crystal quality of SiC with the SiCN buffer layer is obviously improved comparing with that grown on the SiC buffer layer. The SiCN film, composed o
Autor:
S.L. Gu, Kuang Yue, Fang-Fang Ren, R. Zhang, Jinggang Hao, Tongchuan Ma, Y.D. Zheng, X. H. Chen, Jiandong Ye
Publikováno v:
Applied Physics Letters. 119:182102
Heteroepitaxy of corundum-structured α-Ga2O3 and intriguing ferroelectric κ-Ga2O3 is proven as an alternative strategy to solve current challenges in heat dissipation and large-scale productivity for Ga2O3-based power electronic devices, whereas th
Autor:
Hua Xuemei, Hong Zhao, X.Z. Chai, R. Zhang, X.L. He, Tao Tao, L. Yu, Peigao Han, S. Fan, Zhiguo Li, P. Chen, Bin Liu, Y.D. Zheng, Lei Huang, Xiangqian Xiu, Zili Xie
Publikováno v:
Thin Solid Films. 642:124-128
The SiCN film, which has the same crystal structure as 3C-SiC verified by X-ray diffraction and Raman scattering, has been formed on Si (111) substrate by constant-source diffusion using a chemical vapor deposition system. Via X-ray photoelectron spe
Autor:
Jiandong Ye, Yingzhong Shen, Dongyang Liu, Y. Teng, R. Zhang, S.L. Gu, Licai Hao, Kun Tang, Feng Qin, Y.D. Zheng, Shunming Zhu
Publikováno v:
APL Materials, Vol 9, Iss 8, Pp 081106-081106-9 (2021)
The n-type doping of diamond is quite difficult, hindering the development of diamond-based electronic devices for decades. In this work, we have designed a boron–nitrogen co-doping technique to realize n-type diamonds. Basically, the activation en
Autor:
R. Zhang, Yeming Xu, Y.D. Zheng, Jiandong Ye, S.L. Gu, Jinggang Hao, X. H. Chen, Fang-Fang Ren, Hehe Gong
Publikováno v:
Applied Physics Letters. 118:261601
The construction of Ga2O3-based p-n heterojunction offers an alternative strategy to realize bipolar power devices; however, lattice mismatch usually leads to undesirable device performance and makes interface engineering more challenging. In this wo