Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Y. T. Lii"'
Autor:
Peter Zurcher, Bruce E. White, D. J. Taylor, Sufi Zafar, Bo Jiang, S.J. Gillespie, Peir Y. Chu, Y. T. Lii, Robert E. Jones
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A. 20:175-181
Summary form only given. We discuss different integration approaches, their challenges, and problems specific to the integration of ferroelectric materials into Si-CMOS. The focus is on our ongoing integration efforts using a 1 K test vehicle with 2T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcd48104ef0c604024cb0328c434a10a
https://doi.org/10.1109/95.588571
https://doi.org/10.1109/95.588571
Autor:
Peter Zurcher, Robert E. Jones, Bo Jiang, J. Z. Witowski, D. J. Taylor, S.J. Gillespie, Y. T. Lii, P.Y. Chu
Publikováno v:
Integrated Ferroelectrics. 12:23-31
Ferroelectric SiBi2Ta2O9 capacitors with Pt electrodes were measured to have a non-volatile polarization of 6.6 μC/cm2 using 3 V pulse polarization measurements, a leakage current of less than 3×10−9 A/cm2 at 3 V, and a breakdown of voltage great
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa16196fef66d92dc04750dab7fb0d5f
https://doi.org/10.1080/10584589608225745
https://doi.org/10.1080/10584589608225745
Autor:
Y. T. Lii, Robert E. Jones, Peir Y. Chu, M. Kottke, Peter Zurcher, Bo Jiang, Peter Fejes, S.J. Gillespie, Wei Chen, D. J. Taylor
Publikováno v:
Journal of Materials Research. 11:1065-1068
We report on the properties and characterization of SrBi2Ta2O9 (SBT, or Y − 1) thin film capacitors for ferroelectric random access memory (FERAM) applications. The films were prepared by spin-coating from carboxylate precursors. The remanent polar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9752d4655c0891f1c69e18c9efd1b81
https://doi.org/10.1557/jmr.1996.0133
https://doi.org/10.1557/jmr.1996.0133
Autor:
D. J. Taylor, Papu D. Maniar, Peter Zurcher, Bo Jiang, P.Y. Chu, S.J. Gillespie, Y. T. Lii, Robert E. Jones
Publikováno v:
Microelectronic Engineering. 29:3-10
Several metal oxide perovskites and Bi layered perovskites are of substantial interest for integrated circuit memories. Strontium titanate, barium strontium titanate, and lead zirconate titanate based paraelectrics are of particular interest for dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f1a3b9d1c9fee6d6509452ba7de5eaa
https://doi.org/10.1016/0167-9317(95)00106-9
https://doi.org/10.1016/0167-9317(95)00106-9
Autor:
Peter Zurcher, J. Z. Witowski, S.J. Gillespie, Robert E. Jones, Y. T. Lii, Papu D. Maniar, R. Moazzami, P.Y. Chu
Publikováno v:
Thin Solid Films. 270:584-588
Non-volatile ferroelectric random access memories (FERAM) offer substantial advantages over conventional floating-gate electrically erasable programmable read only memory (EEPROM) and flash EEPROM devices. FERAMS can be written at high speeds (≈100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::338e3036af5d2622917f06776d3c4309
https://doi.org/10.1016/0040-6090(95)06754-x
https://doi.org/10.1016/0040-6090(95)06754-x
Publikováno v:
Microelectronic Engineering. 21:409-417
This article describes an exploratory study of miniaturization of metal oxide semiconductor field effect transistors (MOSFETs) to 100nm dimensions. The study has provided a first demonstration of MOSFETs which meet 100nm design rules for all critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af56c1e5f4cbc36ae7cfc3000c585a5
https://doi.org/10.1016/0167-9317(93)90102-b
https://doi.org/10.1016/0167-9317(93)90102-b
Publikováno v:
Applied Physics Letters. 68:2300-2302
This letter addresses the temperature dependence of some of the electrical properties of 0.2‐μm‐thick SrBi2Ta2O9 capacitors with platinum electrodes on silicon wafers for nonvolatile memory applications. Investigations of the remanent polarizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1feb32be1c0c546cda5968e7805cb9
https://doi.org/10.1063/1.116170
https://doi.org/10.1063/1.116170
Autor:
M.R. Polcari, Keith A. Jenkins, Y. T. Lii, D. Moy, J.J. Bucchignano, P.J. Coane, Shalom J. Wind, C.L. Chen, M.G.R. Thomson, David P. Klaus, M. G. Rosenfield, Y.J. Mii, Yuan Taur
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
This paper presents the design, fabrication, and characterization of high-performance 0.1 /spl mu/m-channel CMOS devices with dual n/sup +p/sup +/ polysilicon gates on 35 /spl Aring/-thick gate oxide. A 22 ps/stage CMOS-inverter delay is obtained at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2856a22fec5bd0e54c65ab341387d8ec
https://doi.org/10.1109/iedm.1993.347383
https://doi.org/10.1109/iedm.1993.347383
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
Ultra-low power operation of 0.1 /spl mu/m CMOS is demonstrated at power supply voltages well below 1 V. Design trade-offs among gate delay, active power, and standby power are carried out in a power supply-threshold voltage design space. Experimenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa96e86ed823bc1312b7fda120f68a96
https://doi.org/10.1109/vlsit.1994.324403
https://doi.org/10.1109/vlsit.1994.324403
Publikováno v:
MRS Proceedings. 433
Highlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the diffusion of Bi through the Pt bottom el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b3926269e39bbdb2179e04b078780f
https://doi.org/10.1557/proc-433-97
https://doi.org/10.1557/proc-433-97