Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Y. Shishkin"'
Publikováno v:
THE 2ND INTERNATIONAL CONFERENCE ON PHYSICAL INSTRUMENTATION AND ADVANCED MATERIALS 2019.
The work is devoted to assessment of REM oxides recovery degree in the process of pyrometallurgical reprocessing of spent nuclear fuels. Reduction melting and ICP AES methods were applied. The contribution of inaccuracy from each method was evaluated
Publikováno v:
Materials Science Forum. :191-194
Growth rates from 10 to 38 μm/h of single crystal 3C-SiC on planar Si (001) substrates have been obtained in a low-pressure horizontal hot-wall CVD reactor. The propane-silanehydrogen gas chemistry system with HCl added as a growth additive, which a
Publikováno v:
Materials Science Forum. :415-418
A lightly doped n-type homo-epitaxial layer was grown by CVD onto a heavily doped n-type 4H-SiC substrate for which half of the surface had been made porous by photoelectrochemical etching. Raman spectra are obtained in the optic phonon region using
Autor:
A.O. Galyukov, Yu.N. Makarov, D. Brovin, Y. Shishkin, D. S. Bazarevskiy, Rachael L. Myers-Ward, A.N. Vorob'ev, Stephen E. Saddow, Roman Talalaev
Publikováno v:
Materials Science Forum. :61-64
A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a previously developed simulation platform, which connects fluid dynamics and thermal temperature profiling with c
Publikováno v:
Materials Science Forum. :187-190
A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure,
Publikováno v:
Materials Science Forum. :307-310
A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The growth rate achieved for this process was about 10 μm/h. The process consists of silane/propane/hydrogen chemistry
Publikováno v:
Materials Science Forum. :255-258
Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried out at different speeds on porous layers of two different thicknesses. The quality of the SiC films was evaluat
Publikováno v:
Journal of Physics D: Applied Physics. 39:2692-2695
Non-basal surfaces of 6H-SiC, which are thought to exhibit polar behaviour, were thermally oxidized in steam. The resulting oxide thickness was determined by two methods: a non-contact measurement of the oxide capacitance and a physical measurement o
Publikováno v:
Journal of Crystal Growth. 285:486-490
Epitaxial growth of 4H–SiC is reported at repeatable growth rates up to 32 μm/h in a horizontal hot-wall CVD reactor at temperatures between 1530 and 1560 °C. The growth rate as a function of silane (the source of silicon) flow was studied. The d
Autor:
Robert P. Devaty, Hans Jürgen von Bardeleben, L. Ke, Y. Shishkin, Wolfgang J. Choyke, J. L. Cantin
Publikováno v:
Materials Science Forum. :273-276
The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C3V symmetry, g//=2.00238 and g⊥=2.00317, central hyperf