Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Y. S. Oei"'
Autor:
A. Rohit, K. A. Williams, X. J. M. Leijtens, T. de Vries, Y. S. Oei, M. J. R. Heck, L. M. Augustin, R. Notzel, D. J. Robbins, M. K. Smit
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 1, Pp 29-35 (2010)
A compact scalable reconfigurable multiwavelength router is proposed and demonstrated using an electronically gated cyclic router. Simultaneous wavelength-multiplexed channel allocation is performed with power penalties of 0.2-0.8 dB. Nanosecond time
Externí odkaz:
https://doaj.org/article/8026d30e1c164ba6a106e12f983e3793
Autor:
P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Nötzel, M. K. Smit
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 3, Pp 299-305 (2010)
We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 $\mu
Externí odkaz:
https://doaj.org/article/b81d9a6450cb41389cbb9bef34e6a7aa
Autor:
R. G. Broeke, J. J. M. Binsma, M. van Geemert, F. Heinrichsdorff, T. van Dongen, J. H. C. van Zantvoort, E. Tangdiongga, H. de Waardt, X. J. M. Leijtens, Y. S. Oei, M. K. Smit
Publikováno v:
Integrated Photonics Research.
We have developed a new layer stack based on the integration of active and passive devices in InGaAsP/InP using an MOVPE re-growth technique. The high quality of the new stack is shown by the performance of an all-optical wavelength converter. The co
Autor:
Cun-Zheng Ning, M. T. Hill, M. Marell, E. S. P. Leong, B. Smalbrugge, Y. Zhu, M. H. Sun, P. J. Van Veldhoven, E. J. Geluk, F. Karouta, Y. -S. Oei, H. Wang, K. Ding, R. B. Liu, R. Notzel, M. K. Smit
Publikováno v:
ECS Meeting Abstracts. :2292-2292
not Available.
Publikováno v:
Berichte der Bunsengesellschaft für physikalische Chemie. 83:463-470
Nuclear spin-lattice relaxation rates and nmr absorption linewidths of 1H and 7Li in solid LiH have been measured up to 620 C. For both species motional narrowing is observed which is shifted under the influence of MgH2 additions in opposite directio
Publikováno v:
Le Journal de Physique Colloques. 41:C6-223
Spin-lattice relaxation rates and nmr linewidths of 7Li and 23Na have been measured up to 800 OC for Li2S, Li20, Na2S-and for Na20. Relaxation due to cation diffusion is observed with predominant dipole interactions in Li2S and LizO and quadrupole in
Publikováno v:
Journal of The Electrochemical Society. 132:1973-1980
A new method of growing epitaxial layers of silicon is described. In this method silicon is deposited from the vapour phase in a reactor which is placed in a furnace instead of being heated by an RF coil. Conditions can be realized such that no silic
Publikováno v:
Chemischer Informationsdienst. 11
Publikováno v:
Photovoltaic Solar Energy Conference ISBN: 9789400984257
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f14832431103f51a9d26dbeb5a9d09a
https://doi.org/10.1007/978-94-009-8423-3_86
https://doi.org/10.1007/978-94-009-8423-3_86
Publikováno v:
Chemischer Informationsdienst. 9