Mitigation and Predictive Assessment of SET Immunity of Digital Logic Circuits for Space Missions

Autor: Antoine Touboul, F. Saigne, Vincent Pouget, Frédéric Wrobel, Y. Q. Aguiar, Jean-Luc Autran, Paul Leroux

Publikováno v: Aerospace
Aerospace, MDPI, 2020, 7 (2), pp.12. ⟨10.3390/aerospace7020012⟩
Volume 7
Issue 2
Aerospace, 2020, 7 (2), pp.12. ⟨10.3390/aerospace7020012⟩
Aerospace, Vol 7, Iss 2, p 12 (2020)

International audience; Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) effects were considered irrelevant compared to the data rupture caused by Single-Event Upset (SEU) effects. Howeve

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccb53e0fdd6cfe851ceace88a9559c40
https://lirias.kuleuven.be/handle/123456789/652865

Comparing analytical and Monte-Carlo-based simulation methods for logic gates SET sensitivity evaluation

Autor: Paulo F. Butzen, Rafael B. Schvittz, J.-L. Autran, Leomar S. da Rosa, Frédéric Wrobel, Y. Q. Aguiar

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, 2020, 114, ⟨10.1016/j.microrel.2020.113871⟩
Microelectronics Reliability, Elsevier, 2020, 114, ⟨10.1016/j.microrel.2020.113871⟩

International audience; This paper presents a discussion related to two different methods used to evaluate logic gate susceptibility considering Single Event Transient faults at the layout level. These methods can be adopted into radiation-hardening-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fb1ecf2839be557604524a908ee72fa

Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions

Autor: Y. Q. Aguiar, Paul Leroux, Frédéric Wrobel, Jean-Luc Autran, Frédéric Saigné, Antoine Touboul, Vincent Pouget

Publikováno v: 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018)
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2018), Oct 2018, Aalborg, Denmark
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2018, 88-90, pp.920-924. ⟨10.1016/j.microrel.2018.07.018⟩
Microelectronics Reliability, 2018, 88-90, pp.920-924. ⟨10.1016/j.microrel.2018.07.018⟩

International audience; For nanometer technologies, SET is increasingly growing in importance in circuit design. Accordingly, different hardening techniques were developed to reduce the Soft-Error Rate. Considering selective node hardening technique

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64bc6cf16a5d5391239fb013379ab364
https://doi.org/10.1016/j.microrel.2018.07.018

Temperature dependence and ZTC bias point evaluation of sub 20nm bulk multigate devices

Autor: Alexandra L. Zimpeck, Ricardo Reis, Y. Q. Aguiar, Cristina Meinhardt

Publikováno v: ICECS

Temperature dependence is of utmost importance for the performance and power dissipation analysis. This work investigates the temperature dependence of bulk double-gate FinFET and Trigate MOSFET devices. Additionally, it is also evaluated the analysi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b9c8a3c12588c84b7d2ac775a82b329
https://doi.org/10.1109/icecs.2017.8291999

Implications of Work-Function Fluctuation on Radiation Robustness of FinFET XOR Circuits

Autor: Y. Q. Aguiar, Cristina Meinhardt, Fernanda Lima Kastensmidt, Ricardo Reis, Laurent Artola, Guillaume Hubert

Publikováno v: 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Traditional CMOS technology has reached its limit in the deep submicron era. Hence, advanced technology nodes require novel device structures and new materials to overcome the challenges faced when dealing with planar devices for nanocircuits. As tec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ff56b50fa3f73506ed62eda395a997b
https://doi.org/10.1109/radecs.2017.8696238