Abrupt GaP/Si hetero-interface using bistepped Si buffer

Autor: Charles Cornet, Antoine Létoublon, Mounib Bahri, Karine Tavernier, M.F. da Silva, T. Nguyen Thanh, Anne Ponchet, Rozenn Bernard, Ronan Tremblay, Y. Ping Wang, A. Le Corre, Samy Almosni, Olivier Durand, T. Rohel, Gilles Patriarche, Jithesh Kuyyalil, Julien Stodolna, Ludovic Largeau, César Magén

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Applied Physics Letters, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Zaguán. Repositorio Digital de la Universidad de Zaragoza
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International audience; We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c827752c0c70e0281f9cd84afca06236
https://hal.archives-ouvertes.fr/hal-01228809/file/1.4935494.pdf

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster

Autor: Samy Almosni, Charles Cornet, S. Loualiche, O. Dehaese, Jithesh Kuyyalil, N. Chevalier, Antoine Létoublon, T. Nguyen Thanh, Nathalie Boudet, Nicolas Bertru, Jean-François Berar, Olivier Durand, Tony Rohel, Thomas Quinci, A. Le Corre, K. Tavernier, Jacky Even, Y. Ping Wang

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, 2013, 380, pp.157-162. ⟨10.1016/j.jcrysgro.2013.05.022⟩
Journal of Crystal Growth, Elsevier, 2013, 380, pp.157-162. ⟨10.1016/j.jcrysgro.2013.05.022⟩

International audience; We report on the association of Ultra High Vaccum Chemical Vapor Deposition (UHVCVD) and Molecular Beam Epitaxy (MBE) to achieve III-V (GaP) integration on Si/Si(100) substrates. We first demonstrate that a very good flatness

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38352e9fcecb639382ccbc200e3fe41f
https://hal.science/hal-00918659

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