Zobrazeno 1 - 10
of 177
pro vyhledávání: '"Y. Ohji"'
Compact Modeling of a Flash Memory Cell Including Substrate-Bias-Dependent Hot-Electron Gate Current
Autor:
T. Ogura, T. Eimori, N. Kotani, Y. Araki, K. Ishikawa, Kenichiro Sonoda, Shinichi Kobayashi, Yasuo Inoue, Y. Ohji, S. Shimizu, S. Kawai, Motoaki Tanizawa
Publikováno v:
IEEE Transactions on Electron Devices. 51:1726-1730
We propose a compact model for a Flash memory cell that is suitable for circuit simulation. The model includes a hot-electron gate current model that considers not only channel hot electron injection but also channel initiated secondary electron inje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a61a4d3ecdaa66029c884c4cf36e9b99
https://doi.org/10.1109/ted.2004.834915
https://doi.org/10.1109/ted.2004.834915
Autor:
Yasuo Nara, Takeo Matsuki, Y. Ohji, Motoyuki Sato, Satoshi Kamiyama, N. Mise, Takahisa Eimori, T. Ono, Takayuki Aoyama, T. Morooka, Masaru Kadoshima
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Practical and manufacturable solutions for metal gate/dual high-k CMOS integration are presented. In order to overcome the difficulties of threshold voltage control of metal gate/high-k gate stack especially for gate-first integration, several materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb86f12272d91b61d0aad24dd5e5c3d
https://doi.org/10.1109/icsict.2008.4734777
https://doi.org/10.1109/icsict.2008.4734777
Publikováno v:
2008 International Conference on Simulation of Semiconductor Processes and Devices.
We present results of full 3D sting-level process and device simulation for a typical 60nm NAND flash device, whose read/program/erase characteristics are successfully simulated using the quasi-steady state simulation method. Self boosting and local-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c6e865c992d9f6214f8a6235e70afd4
https://doi.org/10.1109/sispad.2008.4648231
https://doi.org/10.1109/sispad.2008.4648231
Autor:
Y Ohji, Masazumi Tsuneyoshi, Minako Hirahashi, Masao Tanaka, Yuki Koga, Y Kumashiro, Takashi Yao, Tomomi Yamada
Publikováno v:
Histopathology. 52(5)
Aims: CD10+ colorectal carcinomas have a high risk of giving rise to liver metastasis. The aim was to examine phenotypic expression in colorectal neoplasia and to elucidate changes in such expression through the adenoma–carcinoma sequence. Methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b32c78820055ad7d4a64bca39523b8e1
https://pubmed.ncbi.nlm.nih.gov/18370954
https://pubmed.ncbi.nlm.nih.gov/18370954
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
In order to obtain high performance CMOS devices with scaled dimensions, introduction of new technologies into the front-end fabrication process are required and therefore technologies such as strained channel, metal gate, high-k gate dielectrics, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb9f4df5583babce10d00226d1ed0df
https://doi.org/10.1109/icsict.2006.306252
https://doi.org/10.1109/icsict.2006.306252
Publikováno v:
IEEE Transactions on Maggetics. 33(5):4233-4235
Repulsive type magnetic bearing using permanent magnet for the levitation and radial control makes the system cheap and simplified control scheme. But the system is prone to disturbance in the absence of any active control. This paper reports on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d85d2b03decf0841316315ced09a26a1
http://hdl.handle.net/2297/48340
http://hdl.handle.net/2297/48340
Publikováno v:
2005 International Conference On Simulation of Semiconductor Processes and Devices.
A compact model of source-side injection programming for AG-AND flash memory is presented. The lucky-electron model is used to formulate the hot electron injection current for programming. The lateral electric field is estimated using the pseudo-two-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::349dd5ee64a989b6d621c27f21c26603
https://doi.org/10.1109/sispad.2005.201488
https://doi.org/10.1109/sispad.2005.201488
Autor:
T. Eimori, Takeshi Okagaki, T. Uchida, K. Ishikawa, Y. Ohji, Hiroyuki Takashino, Motoaki Tanizawa
Publikováno v:
2005 International Conference On Simulation of Semiconductor Processes and Devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07a2481258e82d4095feb373f810fd5
https://doi.org/10.1109/sispad.2005.201507
https://doi.org/10.1109/sispad.2005.201507
Autor:
Kimihiko Hirao, Sonoko Shimizu, Y. Ohji, O. Tsuchiya, Yoshihiko Ikeda, T. Yoshitake, M. Fujinaga, K. Ishikawa F. Ohta, A. Fukasawa, M. Shimizu, T. Fukumura
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f8d9e998034336e08856c8507eeddd
https://doi.org/10.7567/ssdm.2005.h-4-2
https://doi.org/10.7567/ssdm.2005.h-4-2
Autor:
Kenichi Kuroda, Y. Ohji, H. Ozaki, K. Yanagisawa, Kikuo Watanabe, H. Aono, K. Kubota, K. Okuyama, E. Murakami, K. Makabe
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
We demonstrate a new mode of Hot-Carrier (HC) degradation of p-MOSFETs. A positive feedback HC degradation caused by positive fixed oxide charge increasing the electric field at the drain edge is observed. When TTL AC stress (HC and NBT stress one af
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::185d29a129ecd683f37aa9a2f713e537
https://doi.org/10.1109/relphy.2002.996613
https://doi.org/10.1109/relphy.2002.996613