Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Y. N. Mohapatra"'
Autor:
Purna Chandra Patra, Y. N. Mohapatra
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 618-622 (2021)
We present a systematic study of how graphitic carbon nitride (g-C3N4) in combination with Al2O3 can be used as a double dielectric to control threshold and flat band voltage in capacitance-voltage (C-V) characteristics of an a-IGZO metal-insulator-s
Externí odkaz:
https://doaj.org/article/099282b964484c53a78e669d79afe00b
Publikováno v:
Physical Review Special Topics. Accelerators and Beams, Vol 15, Iss 10, p 100101 (2012)
In a tandem accelerator the knowledge of distribution of charge states as well as the overall transmission of incident ions is of great importance for optimized use of the accelerator. We have studied the effect of the stripper gas pressure on the ch
Externí odkaz:
https://doaj.org/article/5a6e372f2acd462f99a3d9a451b24e3e
Publikováno v:
Journal of Materials Chemistry C. 9:4903-4909
We investigate the frequency dependent capacitance–voltage (C–V) characteristics of space charge limited organic diodes based on m-MTDATA, which is a well characterized model material system. The low frequency C–V curves show an intense peak in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebc6719f0a6b240d4cd433cd3ea95a2e
https://doi.org/10.1039/d1tc00027f
https://doi.org/10.1039/d1tc00027f
Autor:
Y. N. Mohapatra, Shikha Srivastava
Publikováno v:
AIP Conference Proceedings.
Semiconducting layered materials such as transition metal dichalcogenides (TMDCs) have emerged as a significant class of electronic materials. The most representative material MoS2 in this class has been utilized to enhance the performance parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c47671081f7f26cb4496830b6989c301
https://doi.org/10.1063/5.0002132
https://doi.org/10.1063/5.0002132
Autor:
Purna Chandra Patra, Y. N. Mohapatra
Publikováno v:
Materials Letters. 302:130374
Photoelectronic properties of polymeric graphitic carbon nitride (g-C3N4) are not well understood, especially in its different structural forms. We study the evolution of optical properties of three forms viz. bulk, chemically exfoliated layers and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436ea8769cb194a7c0d141d6648297ff
https://doi.org/10.1016/j.matlet.2021.130374
https://doi.org/10.1016/j.matlet.2021.130374
Publikováno v:
Synthetic Metals. 278:116835
In this study, we have used the impedance measurement to investigate the carrier transport in different diode structures fabricated with a well characterized organic hole transport material, m-MTDATA. It is demonstrated that the carrier injection lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44bdc3643e6e1be203c19bb324102d6d
https://doi.org/10.1016/j.synthmet.2021.116835
https://doi.org/10.1016/j.synthmet.2021.116835
Autor:
Subhash Singh, Y. N. Mohapatra
Publikováno v:
Organic Electronics. 51:128-136
Though bias-stress instability in organic thin film transistors (OTFTs) has been studied in a variety of architectures, it is as yet poorly understood. We have investigated the bias-stress effect in fully solution-processed TIPS-pentacene based OTFTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8e9e7723d6d17538de79a92ac56f62
https://doi.org/10.1016/j.orgel.2017.09.007
https://doi.org/10.1016/j.orgel.2017.09.007
Publikováno v:
Solar Energy Materials and Solar Cells. 172:25-33
The surface photovoltage (SPV) and carrier accumulation in open circuit conditions are sensitive indicators of the contact quality and band bending. However, these are not accessible directly in experiments. We analyze the capacitance-voltage (C-V) c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980940edd3704cd9e23b7a372838d377
https://doi.org/10.1016/j.solmat.2017.07.010
https://doi.org/10.1016/j.solmat.2017.07.010
Publikováno v:
Organic Electronics. 50:331-338
Organic semiconductor diodes fabricated using doped/undoped (high-low) homojunction has the potential of providing controlled and high quality current density-voltage (J-V) characteristics based on majority carrier transport. We study mechanisms of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c625de2e9bc5d1db8ce452a580da6e
https://doi.org/10.1016/j.orgel.2017.08.010
https://doi.org/10.1016/j.orgel.2017.08.010
Estimation of the Occupied Density of States Using Capacitance–Voltage Measurement in the NPB System
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
The determination of trap density of states remains a challenging problem in organic semiconductors. In this paper we have demonstrated estimation of occupied density of defect states acting as traps located in the HOMO level in the model small molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6a0f88421f8d98b78e0104e263114f8
https://doi.org/10.1007/978-3-319-97604-4_163
https://doi.org/10.1007/978-3-319-97604-4_163
