Zobrazeno 1 - 10
of 513
pro vyhledávání: '"Y. Moh"'
Publikováno v:
Frontiers in Mechanical Engineering, Vol 9 (2023)
Over the years, the desire to have better thermal comfort in terms of living has been extensively discussed and is in high demand, especially in metropolitan cities. Alongside the desired outcomes, air conditioning facilities have been implemented, b
Externí odkaz:
https://doaj.org/article/6017bc4e25a342b8bbe716f767941493
Autor:
Zhong-Tao Jiang, Xiaoli Zhao, Abul Hossain, T. S. Y. Moh, Amun Amri, Raba’ah Syahidah Azis, Zhifeng Zhou, Hatem Taha, Khalil Ibrahim, Humayun Kabir, Bouraire Ahmed, Mohammednoor Altarawneh, M. Mahbubur Rahman
Publikováno v:
Thin Solid Films. 677:119-129
In the present study, molybdenum doped chromium nitride coatings deposited onto silicon substrates via unbalanced magnetron sputtering, in as-deposited and annealed conditions, at 500–800 °C in steps of 100 °C, were studied to reveal their temper
Autor:
Ehsan Mohammadpour, Xiaoli Zhao, Willey Yun Hsien Liew, Zhong-Tao Jiang, Zhifeng Zhou, T. S. Y. Moh, Jean-Pierre Veder, Shyam Bharatkumar Patel, Sunghwan Lee, Nicholas Mondinos
Publikováno v:
Journal of Alloys and Compounds. 786:507-514
The temperature dependence of phase composition and lattice parameters, for TiAlxN thin film coating, are experimentally investigated by in-situ synchrotron radiation X-ray diffraction (SR-XRD), at temperatures between 25 °C and 700 °C. Mechanical
Autor:
Lee Siang Chuah, Hooi Ling Lee, Ella Awaltanova, Nicholas Mondinos, Iwantono Iwantono, M. Mahbubur Rahman, Zhong-Tao Jiang, T. S. Y. Moh, Amun Amri, Chun Yang-Yin, Hantarto Widjaja, Mohammednoor Altarawneh, Idral Amri
Publikováno v:
Journal of Sol-Gel Science and Technology. 90:450-464
Ternary cobalt-based metal oxide (ZnCo2O4) has been successfully coated onto aluminum substrate via sol–gel method. The coatings were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X
Autor:
T. S. Y. Moh, A. Marthen, P.J. French, Konstantinos Vakalopoulos, Agung Purniawan, Gregory Pandraud, Pasqualina M. Sarro
Publikováno v:
Sensors and Actuators A: Physical. 188:127-132
In the present work, we report the design, fabrication and characterisation of an evanescent waveguide sensor. TiO2 deposited by Atomic Layer Deposition (ALD) on silicon wafer is used as waveguide material. In order to enhance the surface interaction
Autor:
Li, Dagang1 (AUTHOR), Zhao, Jinze2 (AUTHOR), Wang, Yuan1 (AUTHOR), Wang, Jialu2 (AUTHOR), Sun, Zhenjuan3 (AUTHOR), Wei, Fuxin4 (AUTHOR) weifuxin@mail.sysu.edu.cn, Wei, Gang5 (AUTHOR) wei@uni-bremen.de, Sun, Zhengang1 (AUTHOR) 120220902151@lzu.edu.cn
Publikováno v:
Small Science. Jan2025, Vol. 5 Issue 1, p1-26. 26p.
Autor:
Q-A. Huang, Ernst J. R. Sudhölter, T. S. Y. Moh, Gregory Pandraud, Pasqualina M. Sarro, Meng Nie, L.C.P.M. de Smet
Publikováno v:
Electronics Letters. 49:782-784
A high signal-to-noise ratio (SNR) in silicon nanowire (SiNW) field effect transistors (FETs) is crucial for detecting low concentrations of biological material as the signal changes are often small and difficult to be differentiated from the baselin
Autor:
Sandro Carrara, Francesca Puppo, T. S. Y. Moh, Marie-Agnès Doucey, G. De Micheli, Gregory Pandraud, Pasqualina M. Sarro
Publikováno v:
2013 IEEE SENSORS.
This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW- FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an
Publikováno v:
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII).
We report a novel shear mode resonator excited by lateral field using an AlN/SiN membrane structure, for mass sensing applications. The shear acoustic wave was clearly observed using a ring-shaped electrode structure on a round membrane made of a ver
Publikováno v:
2012 IEEE Sensors.
A new measurement approach for high precision characterization of piezoresistance in silicon nanowires (SiNWs) is presented. No dedicated silicon chips with embedded piezoresistors are needed, but the wafer containing the NWs are simply diced in cant