Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Y. M. Le Vaillant"'
Autor:
Laurent Pizzagalli, Julien Godet, Jacques Rabier, Anne Talneau, Sandrine Brochard, Y. M. Le Vaillant, Olivier P. Thomas, A. Merabet, Ludovic Thilly, Christophe Tromas, Michael Texier
Publikováno v:
Acta Materialia
Acta Materialia, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
Acta Materialia, Elsevier, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
Acta Materialia, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
Acta Materialia, Elsevier, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
International audience; The mechanical properties of materials usually depend on the size of the considered object. Silicon, for instance, undergoes between the macroscopic and nanometer scales, a brittle-to-ductile transition at room temperature. Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::763949ebe1ef63f55bc0e99505921112
https://hal.science/hal-02318908
https://hal.science/hal-02318908
Autor:
Michael Texier, Laurent Pizzagalli, Christophe Tromas, Olivier P. Thomas, Anne Talneau, Sandrine Brochard, A. Merabet, Ludovic Thilly, Julien Godet, Y. M. Le Vaillant, Jacques Rabier
Publikováno v:
Journal of Physics: Conference Series. 1190:012004
Physical properties of nano-objects differ from what they are in bulk materials when the size decreases down to the nanometre scale. This behavioural change, named size effect, also applies to mechanical properties and has been evidenced in various m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1ba5c1594ec15b6b4871e722d25c570
https://doi.org/10.1088/1742-6596/1190/1/012004
https://doi.org/10.1088/1742-6596/1190/1/012004
Akademický článek
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Autor:
P. Patruno, Carlos Mazure, Y.-M. Le Vaillant, Craig Huffman, Klaus Schruefer, Tiehui Liu, T. Schulz, Weize Xiong, Kyoungsub Shin, G. Gebara, P. Kohli, Ian Cayrefourcq, K. Mathews, C.R. Cleavelin, Mark Kennard
Publikováno v:
IEEE Electron Device Letters. 27:612-614
In this letter, it is shown that for fin widths down to and (100)/ fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/ fins, it is enhanced by up to 30% for (100)/ fins. These results can be qualitatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2d21cb143e8d51544e03f30def03d9
https://doi.org/10.1109/led.2006.877714
https://doi.org/10.1109/led.2006.877714
Autor:
J. Olivier, Y.-M. Le Vaillant, Olivier Durand, Roger Aulombard, S. Ruffenach-Clur, Olivier Briot, Jean-Yves Duboz, R. Bisaro, Bernard Gil
Publikováno v:
Materials Science and Engineering: B. 50:32-37
It is now established that low temperature-grown buffer layers are needed to improve the structural and electronic properties of GaN layers grown on sapphire. Using X-ray diffraction, we have studied the dependency on temperature and annealing time o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0110c2c21f718398a59d78ce8351fa3
https://doi.org/10.1016/s0921-5107(97)00205-5
https://doi.org/10.1016/s0921-5107(97)00205-5
Autor:
Carlos Mazure, Chrystel Deguet, A. Beaumont, P. Perreau, Bruno Ghyselen, F. Chieu, N. Kernevez, Y. M. Le Vaillant, Bruce Faure, C. Morales, S. Personnic, C. Lagahe-Blanchard, Jean-Michel Hartmann, Frederic Allibert, S. Pocas, Fabrice Letertre, C. Richtarch, Jalaguier, J. Dechamp
Publikováno v:
MRS Proceedings. 809
First results on formation of thin film GeOI structures by the Smart Cut™ technology are presented in this paper. Thin single crystal layers of Ge have been successfully transferred, via oxide bonding layer, onto standard Si substrates with diamete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6cbcee000e54f14d49b05fca5aeb416
https://doi.org/10.1557/proc-809-b4.4
https://doi.org/10.1557/proc-809-b4.4
Autor:
Roger Aulombard, M. A. Renucci, Olivier Briot, Jean-Luc Rouvière, S. Clur, Y-M. Le Vaillant, J. F. Demangeot, A. Andenet, J. Frandon, Bernard Gil
Publikováno v:
MRS Proceedings. 468
AlGaN is an important material for the realization of nitride heterostructures, involved in most device designs. We have studied the growth of this alloy using low pressure MOVPE (76 Torr), and using triethyl-gallium (TEGa), trimethyl-aluminum (TMA1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63723447cd0b79a70984f940cf69514b
https://doi.org/10.1557/proc-468-23
https://doi.org/10.1557/proc-468-23
Autor:
A. Andenet, Olivier Briot, Roger Aulombard, Jean-Yves Duboz, J. Olivier, S. Ciur, R. Bisaro, Bernard Gil, Y.-M. Le Vaillant, Olivier Durand
Publikováno v:
MRS Proceedings. 468
The problem of residual strain in GaN epilayers is currently the attention of many studies, since it affects the optical and electrical properties of the epilayers. In order to discuss the origin of this residual strain, we have grown a series of GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20081142cc240d9f9e3098721727fb9d
https://doi.org/10.1557/proc-468-173
https://doi.org/10.1557/proc-468-173
Publikováno v:
MRS Proceedings. 468
Group theory states that the spectroscopy of excitons in GaN epilayers grown with biaxial stress on M Plane (10–10)-oriented substrates is strongly anisotropie in the growth plane, in contrast to the situation if growth occurs on conventional C pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd64f20112bdf02b0076d423fb36b69a
https://doi.org/10.1557/proc-468-243
https://doi.org/10.1557/proc-468-243
Autor:
Michael Geoffrey Somekh, H. Chouaib, Mark Kennard, S. Ward, Y. M. Le Vaillant, V. Guenebaut, Martin Edward Murtagh, Steve D. Sharples, Mark C. Pitter, P. V. Kelly
Publikováno v:
Review of Scientific Instruments. 79:103106
We present an improved photoreflectance (PR) spectroscopy technique upon the prior art in providing a rapid acquisition method of the PR spectrum in a simultaneous and multiplexed manner. Rapid PR (RPR) application is the on-line monitoring of strain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45567b18f59c68b1e15f720e0f5b7f37
https://doi.org/10.1063/1.2999919
https://doi.org/10.1063/1.2999919