Výsledky vyhledávání

Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Autor: Marion B. Reine, F. C. Case, R. Starr, Pradip Mitra, Y. L. Tyan

Publikováno v: Journal of Electronic Materials. 25:1328-1335

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor depos

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::787502061fbdfb89aaf74d723ce51d22
https://doi.org/10.1007/bf02655028

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Non-contact lifetime screening technique for HgCdTe using transient millimetre-wave reflectance

Autor: S. L. Barnes, Y. L. Tyan, P. Mitra, T. R. Schimert, A. J. Brouns, F. C. Case

Publikováno v: Semiconductor Science and Technology. 8:928-935

A non-contact lifetime screening technique for measuring excess carrier lifetime in HgCdTe (MCT) using transient millimetre-wave reflectance (TMR) is presented. The TMR system described is capable of measuring lifetimes ranging from or approximately=

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4bc4f6e986b4a50b117de297766702ed
https://doi.org/10.1088/0268-1242/8/6s/013

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Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions

Autor: Thomas R. Schimert, Richard D. Starr, M. Kestigian, Pradip Mitra, F. C. Case, Marion B. Reine, Y. L. Tyan, M. H. Weiler

Publikováno v: SPIE Proceedings.

Recent developments in MOCVD growth of Hg1-xCdxTe photodiodes using the interdiffused multilayer process are reported. Iodine doping of HgCdTe is described using ethyl iodide. Using ethyl iodide, the iodine doping level can be controlled in the range

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9a20be520f680a0d2f472ce5acda6e1
https://doi.org/10.1117/12.179649

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Excess Carrier Lifetimes in (HgCd)Te Grown by Mocvd Interdiftused Multilayer Process

Autor: P. Mitra, T. R. Schimert, Y. L. Tyan, A. J. Brouns, F. C. Case

Publikováno v: MRS Proceedings. 302

Transient lifetime measurements on p- and n-type Hg1-xCdxTe epitaxial films, grown by the MOCVD-interdiffused multilayer process (IMP) on CdTe and CdZnTe, are reported. Lifetimes have been measured on undoped n-type, vacancy and arsenic doped p-type

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::98e4f06d996bfa3d20ad38907da950c0
https://doi.org/10.1557/proc-302-403

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Analysis of excess carrier lifetime in p-type HgCdTe using a three-level Shockley–Read model

Autor: Y. L. Tyan, Lewis T. Claiborne, T. R. Schimert

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1560

A three‐level Shockley–Read model for p‐type Hg vacancy‐doped HgCdTe is proposed which leads to an accurate prediction of excess carrier lifetime versus temperature. The three levels included in the model are the two shallow Hg vacancy accept

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32c4b65e9ad264744e71941a574cf0a9
https://doi.org/10.1116/1.586249

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Beta-decay of the hypertriton

Autor: Y. L. Tyan, T. Y. Lee, C. T. Chen-Tsai

Publikováno v: Il Nuovo Cimento A. 47:735-741

The β-decay of the hypertriton is considered. The partial and total decay rates are calculated and expressed graphically as functions of theV-A coupling constant ratioCv/CA as well at the spin states of the hypertriton.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae54dd6c7233853d595ae4f62ccb4b1b
https://doi.org/10.1007/bf02771389

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