Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Y. L. Casallas-Moreno"'
Autor:
Y. L. Casallas-Moreno, S. Gallardo-Hernández, C. M. Yee-Rendón, M. Ramírez-López, A. Guillén-Cervantes, J. S. Arias-Cerón, J. Huerta-Ruelas, J. Santoyo-Salazar, J. G. Mendoza-Álvarez, M. López-López
Publikováno v:
Materials, Vol 12, Iss 19, p 3203 (2019)
Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process
Externí odkaz:
https://doaj.org/article/fe3262de892c4bd6b6c6b4efd0331f39
Autor:
Héctor Guillén-Bonilla, Verónica-M. Rodríguez-Betancourtt, José Trinidad Guillen-Bonilla, Lorenzo Gildo-Ortiz, Alex Guillen-Bonilla, Y. L. Casallas-Moreno, Oscar Blanco-Alonso, Juan Reyes-Gómez
Publikováno v:
Sensors, Vol 18, Iss 7, p 2299 (2018)
Nanoparticles of manganese antimonate (MnSb2O6) were prepared using the microwave-assisted colloidal method for its potential application as a gas sensor. For the synthesis of the oxide, manganese nitrate, antimony chloride, ethylenediamine and ethyl
Externí odkaz:
https://doaj.org/article/91d8fd6149f945f1ab7667ea6b7db6f3
Autor:
M A Zambrano-Serrano, Carlos A Hernández, O de Melo, M Behar, S Gallardo-Hernández, Y L Casallas-Moreno, A Ponce, A Hernandez-Robles, D Bahena-Uribe, C M Yee-Rendón, M López-López
Publikováno v:
Materials Research Express, Vol 9, Iss 6, p 065903 (2022)
n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a redu
Externí odkaz:
https://doaj.org/article/9c09694f308f46ee8c6200add83c89d3
Autor:
S. A. Tomás, M. de la Luz Olvera‑Amador, Y. L. Casallas-Moreno, Antonio Casillas-Zamora, M. Rodríguez-Betancourtt, Héctor Guillén-Bonilla, Lorenzo Gildo-Ortiz, Alex Guillén-Bonilla, José Trinidad Guillén-Bonilla
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:7359-7372
In this work, a simple and economical chemical method was used to synthesize MnSb2O6 nanoparticles for their potential application as a gas sensor. The nanoparticles of the oxide were analyzed by powder X-ray diffraction, finding the crystalline phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b81af7c5e1d65cd4f9b46e8514a5017a
https://doi.org/10.1007/s10854-019-02700-3
https://doi.org/10.1007/s10854-019-02700-3
Autor:
M. de la L. Olvera-Amador, Verónica María Rodríguez-Betancourtt, Alex Guillén-Bonilla, José Trinidad Guillén-Bonilla, Juan Pablo Morán-Lázaro, Y. L. Casallas-Moreno, Héctor Guillén-Bonilla, Lorenzo Gildo-Ortiz, Jaime Santoyo-Salazar
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:6166-6177
Nickel antimonate (NiSb2O6) was synthesized by a microwave-assisted wet chemical method for its application as a potential gas sensor. The powders calcined at 600 °C were corroborated by X-ray diffraction. The microstructure of the material was anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2277baf15bf5cda3e708e1d5ee255b9c
https://doi.org/10.1007/s10854-019-00918-9
https://doi.org/10.1007/s10854-019-00918-9
Autor:
Máximo López-López, Yuri Kudriatsev, Y. L. Casallas-Moreno, Victor-Tapio Rangel-Kuoppa, Mario Alberto Zambrano-Serrano, Yaoqiao Hu, S. Gallardo-Hernández, C.A. Hernández-Gutiérrez, Dagoberto Cardona
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
Scientific Reports
Scientific Reports
We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance films which can be us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa725ab11e6532e02245b6a8cc1e8627
https://doi.org/10.1038/s41598-020-73872-w
https://doi.org/10.1038/s41598-020-73872-w
Autor:
Heberto Gómez-Pozos, Y. L. Casallas-Moreno, Máximo López-López, Arturo Ponce, C.A. Hernández-Gutiérrez, Eduardo Ortega, S. Gallardo-Hernández, Dagoberto Cardona, G. Contreras-Puente, L.A. Hernández-Hernández
Publikováno v:
Thin Solid Films. 647:64-69
Metastable cubic InN is a promising semiconductor for developing optoelectronic, photovoltaic and electronic devices. The suitable application of the material requires a high crystalline quality and a high cubic phase purity. For this reason, it is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604a15deeae5adf45128fe36b29fb608
https://doi.org/10.1016/j.tsf.2017.12.012
https://doi.org/10.1016/j.tsf.2017.12.012
Autor:
Mario Alberto Zambrano-Serrano, Y. L. Casallas-Moreno, Ángel Guillén-Cervantes, Briseida Guadalupe Pérez-Hernández, Máximo López-López, S. Gallardo-Hernández
Publikováno v:
Applied Physics Express. 14:085507
Self-assembling of nanovoids with a precisely controlled depth at the GaN/GaAs interface is reported and their formation mechanism discussed. During the very early stages of GaN growth by molecular beam epitaxy over GaAs(100) misoriented substrates,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d1eb5ea9bce8994b7420b4c0c7a0ac
https://doi.org/10.35848/1882-0786/ac15bd
https://doi.org/10.35848/1882-0786/ac15bd
Autor:
V.M. Sánchez-Reséndiz, Y. L. Casallas-Moreno, Esteban Mota, A. G. Hernandez, Máximo López-López, Yu. Kudriavtsev, A. Escobosa-Echavarria, C.A. Hernández-Gutiérrez
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 388:35-40
The structural, chemical, and electrical characteristics of In + ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ce82dd82d724748f01aaa3ef2eef523
https://doi.org/10.1016/j.nimb.2016.11.001
https://doi.org/10.1016/j.nimb.2016.11.001
Autor:
Jaime Santoyo-Salazar, Y. L. Casallas-Moreno, C. M. Yee-Rendón, S. Gallardo-Hernández, Jorge A. Huerta-Ruelas, M. Ramírez-López, Máximo López-López, A. Guillen-Cervantes, J.S. Arias-Cerón, J.G. Mendoza-Alvarez
Publikováno v:
Materials
Volume 12
Issue 19
Materials, Vol 12, Iss 19, p 3203 (2019)
Volume 12
Issue 19
Materials, Vol 12, Iss 19, p 3203 (2019)
Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::584554141fbe1c56dddc754dfec8dc1d