Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Y. Kashiwaba"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:16873-16877
Radiation detection characteristics of a device combining a YAP:Ce (cerium-doped yttrium aluminum perovskite) scintillator and a ZnO UV sensor were studied using X-ray radiation. Both ZnO and YAP have high resistance to radiation. A photoconductive-t
Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method
Autor:
Y. Kashiwaba, Y. Tanaka, M. Sakuma, T. Abe, Y. Imai, K. Kawasaki, A. Nakagawa, I. Niikura, H. Osada
Publikováno v:
Journal of Electronic Materials. 47:4345-4350
Preparation of non-polar ZnO ( $$ 11\overline{2} 0 $$ ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films st
Autor:
T. Abe, Y. Nameshida, Y. Ogata, A. Miura, A. Nakagawa, T. Chiba, Y. Kashiwaba, M. Daibo, I. Niikura, H. Osada
Publikováno v:
Journal of Electronic Materials. 47:4272-4276
The photoconductive characteristics of undoped ZnO single crystals grown by the hydrothermal method were improved by annealing in oxygen gas. The photocurrent in the visible light region decreased with annealing and became about 1/105 and about 1/104
Autor:
Shuzo Takahashi, Shuhei Kamada, Michiko Nakagawa, Tetsuya Chiba, Hiroshi Osada, Masahiro Daibo, Yasube Kashiwaba, Takami Abe, Akira Nakagawa, Shigeki Chiba, Ikuo Niikura, Y. Kashiwaba
Publikováno v:
physica status solidi c. 13:581-584
The effects of ambiences on photoconductive properties of the Zn-face of undoped ZnO and nitrogen-doped ZnO (ZnO:N) single crystals are described. Oxygen (O2) gas affected the photocurrent spectra of the Zn-face of both single crystals. The photocurr
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Autor:
Shigeki Chiba, Takami Abe, Kouichi Tsutsumi, K. Aota, Yasube Kashiwaba, Michiko Nakagawa, Y. Kashiwaba, Hiroshi Osada, T. Ojima, Masahiro Daibo, Tetsuya Chiba, Tamiya Fujiwara, Ikuo Niikura, Akira Nakagawa, Shuzo Takahashi, Michio Suzuki
Publikováno v:
Thin Solid Films. 571:615-619
Non-doped Mg x Zn 1 − x O films (Mg x Zn 1 − x O films) and nitrogen-doped Mg x Zn 1 − x O films (Mg x Zn 1 − x O:N films) were grown epitaxially on Zn faces of ZnO single crystal substrates by the plasma-assisted reactive evaporation (PARE)
Autor:
Tetsuya Chiba, Masahiro Daibo, Kazuyuki Meguro, Akira Nakagawa, Haruyuki Endo, Y. Kashiwaba, Shuzo Takahashi, Yasube Kashiwaba, Takami Abe, Shuzo Oshima, Syuhei Kamata, Michiko Nakagawa, Hiroshi Osada, Shigeki Chiba, Ikuo Niikura
Publikováno v:
physica status solidi c. 11:1304-1307
Nitrogen-doped (N-doped) ZnO single crystals were prepared by the hydrothermal method. Resistivity of the N-doped ZnO single crystal was 107–108 Ωcm, which was about 104-times higher than that of the non-doped ZnO single crystal. Photocurrent of t
Autor:
K. Aota, Michiko Nakagawa, Hiroshi Osada, T. Ojima, Yasube Kashiwaba, Shigeki Chiba, Y. Kashiwaba, Masahiro Daibo, Tetsuya Chiba, Takami Abe, Akira Nakagawa, Ikuo Niikura, Shuzo Takahashi
Publikováno v:
physica status solidi c. 11:1345-1348
The band gap energy (Eg) of high-quality Mgx Zn1-xO films grown on ZnO (0001) substrates by the plasma-assisted reactive evaporation method using a ZnMg alloy could be estimated by the photocurrent (Iph). Measurement of Iph was more useful than photo
Autor:
Hiroshi Osada, Tai Yokoyama, Mio Sakuma, Yasube Kashiwaba, Masahiro Daibo, Akira Nakagawa, Takami Abe, Y. Kashiwaba, Ikuo Niikura
Publikováno v:
physica status solidi c. 11:1361-1364
High-quality non-polar ZnO (110) films were epitaxially grown on single crystal NdGaO3 (NGO) (001) substrates. The non-polar ZnO (110) films were grown by metal organic chemical vapour deposition using Zn(C5H7O2)2 and O2 gas as starting materials. X-
Autor:
Masahiro Daibo, Hiroshi Osada, Mio Sakuma, Ikuo Niikura, Takami Abe, Akira Nakagawa, Y. Kashiwaba, Yasube Kashiwaba
Publikováno v:
Applied Surface Science. 286:126-130
Non-polar single crystal ZnO 1 0 1 ¯ 0 substrates with hydrogen peroxide (H2O2) treatment were characterized and applied to Schottky barrier diodes. Formation of a ZnO2 layer with a polycrystalline structure was confirmed by 2θ scans of X-ray diffr