Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Y. Inouchi"'
Autor:
Toshiyuki Sameshima, Tomokazu Nagao, Takashi Sugawara, Junichi Tatemichi, Masahiko Hasumi, Y. Inouchi
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We report formation of low resistivity n-type doped silicon region at 300°C by the method of two-step ion implantation. Phosphorus ions with a dose of 2×1014 cm−2 at 70 keV followed by hydrogen ions with 1×1016 cm−2 at 8 keV were implanted at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572d359d6f76cfa7713256d281916e2f
https://doi.org/10.23919/am-fpd.2019.8830611
https://doi.org/10.23919/am-fpd.2019.8830611
Autor:
Toshiyuki Sameshima, Y. Inouchi, Keisuke Yasuta, Junichi Tatemichi, Tomokazu Nagao, Masahiko Hasumi, Takuma Uehara
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Ion implantation of 1.5xl016-cm−2 H+ at 8 keV or 1.0xl014-cm−2 Ar+ at 70 keV was carried out at room temperature (RT) to crystalline silicon in advance of ion implantation of 1.0×10-15-cm−2B+ at RT. Decrease in the crystalline volume ratio and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37c87b1559631c4c2fabb1117ff00a2
https://doi.org/10.23919/am-fpd.2018.8437361
https://doi.org/10.23919/am-fpd.2018.8437361
Publikováno v:
Applied Physics A. 124
Activation and carrier generation are reported in the case of phosphorus implantation with a dose of 2.0 × 1015 cm−2 at 70 keV to crystalline silicon substrates under heating ranging from 200 to 500 °C. The analysis of the optical reflectivity sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e4f5bc5d250566dc3bede47eb7c6d1
https://doi.org/10.1007/s00339-018-1656-8
https://doi.org/10.1007/s00339-018-1656-8
Publikováno v:
Journal of Laser Micro/Nanoengineering. 7:93-96
Buried void layer formation in silicon substrates was achieved by hydrogen ion implantation followed by 940-nm infrared laser rapid heating. P-type silicon substrates coated with 100-nm-thick thermally grown SiO2 layers were implanted with hydrogen a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65720f09aac87ae4f5af682cb8b9bba1
https://doi.org/10.2961/jlmn.2012.01.0018
https://doi.org/10.2961/jlmn.2012.01.0018
Akademický článek
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Publikováno v:
Review of Scientific Instruments. 71:1023-1028
Large area ion sources have been used in ion doping systems in the field of LCD production. In these ion sources good uniformity and wide dynamic range in beam current are both required to achieve the good dose uniformity in wide dose range. A new io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::777c1142f5640e7e9389e00f66ef50ee
https://doi.org/10.1063/1.1150377
https://doi.org/10.1063/1.1150377
Autor:
M. Naito, Y. Inouchi, Masahiko Hasumi, Toshiyuki Sameshima, Tomohisa Mizuno, Shinya Yoshidomi, Tomohiko Nakamura, T. Ishii
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eab50cb462716b19a4b9612e835af2da
https://doi.org/10.7567/ssdm.2013.ps-15-1
https://doi.org/10.7567/ssdm.2013.ps-15-1
Autor:
S. Cherekdjian, R. O. Maschmeyer, J. Cites, J. Tatemichi, Y. Inouchi, M. Onoda, K. Orihira, T. Matsumoto, M. Konishi, M. Naito, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end‐station with robotic handling for GEN 4 glass substrates was redesigned, and a new end‐stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4bdfc51848c10eb1762335e8c4ce59
https://doi.org/10.1063/1.3548430
https://doi.org/10.1063/1.3548430
Autor:
Y. Fujimoto, J. Tatemichi, Y. Inouchi, M. Naito, Y. Nagao, K. Kogure, S. Yoshitomi, Y. Kanda, M. Hasumi, T. Sameshima, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki
Publikováno v:
AIP Conference Proceedings.
We report precise analysis of photo‐induced carrier recombination properties in the case of hydrogen ion implantation to silicon substrates. Hydrogen ion implantation markedly decreased the effective minority carrier lifetime (τeff) from 631 to 3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::544d05c236ebb3b8fa1c88dfff8080c6
https://doi.org/10.1063/1.3548352
https://doi.org/10.1063/1.3548352
Publikováno v:
Proceedings of IGARSS '93 - IEEE International Geoscience and Remote Sensing Symposium.
Six LANDSAT TM images of Lake Suwa, Japan, were processed to extract current patterns. The lake was almost completely covered with Aoko (phytoplankton bloom) in three summer images. But two spring images, which were after rainfall, showed dispersion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4df20ae82b67884b98c4d8830fe16b0
https://doi.org/10.1109/igarss.1993.322287
https://doi.org/10.1109/igarss.1993.322287