Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Y. Horoshima"'
Publikováno v:
1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A CCD imager with a 5.86mm(V) × 7.13mm(H) chip and an imaging area of 4.32mm(V) × 5.73mm(H) will be reported. The S/N ratio is 55dB under scene illumination level of 200 1x, which is 50% of the saturation illumination.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d5916c88ec672fbf8201a412f5ceb2e
https://doi.org/10.1109/isscc.1985.1156765
https://doi.org/10.1109/isscc.1985.1156765
Publikováno v:
IEEE Transactions on Electron Devices. 35:642-645
A CPD image sensor with an SOI (silicon-on-insulator) structure has been developed. The sensor is composed of read-out transistors fabricated on laser-recrystallized silicon, photodiodes on the seeding region, an MOS shift register, and a CCD shift r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9134063b7f5e87cf7a3104357675b46e
https://doi.org/10.1109/16.2507
https://doi.org/10.1109/16.2507