Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Y. Erokhin"'
Publikováno v:
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences. :67-71
Detection of moving objects in video sequence received from moving video sensor is a one of the most important problem in computer vision. The main purpose of this work is developing set of algorithms, which can detect and track moving objects in rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b65c14955958ac649f62735f1d45540
https://doi.org/10.5194/isprs-archives-xlii-2-w4-67-2017
https://doi.org/10.5194/isprs-archives-xlii-2-w4-67-2017
Publikováno v:
MECO
In our research we compare various neural network architectures that are used for object detection and recognition. In this work vehicles and pedestrians are considered objects of interest. Modern artificial neural networks are able to detect and loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d024f0a74c92b4b41793c91cdac00b
https://doi.org/10.1109/meco.2019.8760125
https://doi.org/10.1109/meco.2019.8760125
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 307:491-494
Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee65977a6d45942a4698074adb7f6816
https://doi.org/10.1016/j.nimb.2012.11.092
https://doi.org/10.1016/j.nimb.2012.11.092
Autor:
F. Lallement, Damien Lenoble, Steven R. Walther, Vikram Singh, Anne Testoni, Y. Erokhin, A. Grouillet
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:126-130
For leading edge CMOS and DRAM technologies, plasma doping (PLAD) offers several unique advantages over conventional beamline implantation. For ultra-low energy source and drain extensions (SDE), source drain contact and high dose poly doping implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bc5131e350c036b56146e61761ab3f4
https://doi.org/10.1016/j.nimb.2005.04.087
https://doi.org/10.1016/j.nimb.2005.04.087
Publikováno v:
Chemistry and Technology of Fuels and Oils. 36:283-289
In creating an industrial environmental monitoring (IEM) system, it is important to optimally position the gas load monitoring posts (GMP). We will examine one approach to placement of these posts with respect to the Moscow Refinery Open Joint-Stock
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93785694ec53e8d74b365d0c3470e8bd
https://doi.org/10.1007/bf02742845
https://doi.org/10.1007/bf02742845
Autor:
H. Maynard, Z. Y. Zhao, Qian Zhou, N. Variam, Yee-Chia Yeo, T. Toh, Y. Erokhin, T. Henry, Shao-Ming Koh
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c6a18f172977146adce65a5645e7fd
https://doi.org/10.7567/ssdm.2009.a-3-3
https://doi.org/10.7567/ssdm.2009.a-3-3
Autor:
Ganesh S. Samudra, T. Henry, C. M. Ng, Shao-Ming Koh, Yee-Chia Yeo, Y. Erokhin, Z. Y. Zhao, H. Maynard, N. Variam
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42cf1e11ad38b281da00588a211bf8f4
https://doi.org/10.7567/ssdm.2009.a-1-6
https://doi.org/10.7567/ssdm.2009.a-1-6
Autor:
H. Besaucele, C. Boniface, G. Fisicaro, N. Variam, F. Desse, Karim Huet, J. Venturing, Y. Erokhin, A. La Magna, M. Schuhmacher, V. Privitera
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors.
Single pulse Deep Melt Activation High activation of both B (anode) and P (buffer) Over 1.2 μm melt depth possible EOR defect annealing Layers electrical properties preserved Process faster than dopantdiffusion Limited dopantintermixing High tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0244f45325a50b28bbee254f16ec9d76
https://doi.org/10.1109/rtp.2009.5373482
https://doi.org/10.1109/rtp.2009.5373482
Autor:
A. Grouillet, Ludovic Godet, B. Duriez, B. Tavel, Jay T. Scheuer, F. Lallement, J. Weeman, Damien Lenoble, Francois Wacquant, M. Woo, P. Stolk, Daniel Distaso, Franck Arnaud, Y. Erokhin
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
N-type and p-type Plasma Doping (PLAD) process have been developed for fabricating the ultra-shallow junctions (USJ) needed for the 65nm CMOS technology. For the first time, the strong benefit of PLAD compared to ultra-low energy implantations for fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8739b0d60825a71d5d23dab0256c98
https://doi.org/10.1109/vlsit.2004.1345465
https://doi.org/10.1109/vlsit.2004.1345465
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
An enhanced xenon plasma electron flood gun (PEF-Xe) used in a GSD-200E/sup 2/ ion implanter is characterized by means of various wafer test structures. High dose/beam current implants are performed under different PEF settings to investigate the cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b26d033a0578b3ad0a95cafda53a0df
https://doi.org/10.1109/iit.2000.924212
https://doi.org/10.1109/iit.2000.924212