Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Y. Bouizem"'
Akademický článek
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Autor:
J.D. Sib, L. Chahed, K. Zellama, Ahmed Bouhekka, Yamina Brahmi, D. Benlakehal, A. Kebab, Nathalie Lemée, F. Kail, Larbi Filali, Y. Bouizem
Publikováno v:
Surfaces
Volume 2
Issue 2
Pages 30-431
Volume 2
Issue 2
Pages 30-431
Hydrogenated nanocrystalline silicon, while being non-charged and non-polar, could be an ideal candidate for the non-covalent and orientation-controlled immobilization of biomolecules thanks to local electric fields around nanocrystals. To that effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02addcb049bb3c8c4284f6ec50357fa7
https://doi.org/10.3390/surfaces2020030
https://doi.org/10.3390/surfaces2020030
Autor:
F. Kail, A. Kebab, Yamina Brahmi, K. Zellama, Larbi Filali, J.D. Sib, Ahmed Bouhekka, D. Benlakehal, L. Chahed, Y. Bouizem
Publikováno v:
Surface and Interface Analysis. 51:531-540
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992f9b426c018ed37de3e0db5555c669
https://doi.org/10.1002/sia.6614
https://doi.org/10.1002/sia.6614
Publikováno v:
Optik. 168:65-76
In the present work, three series of hydrogenated silicon thin films were prepared by radiofrequency magnetron sputtering method at low temperature, various deposition pressures (2, 4, 6 Pa) and different rf powers (200, 300, 400, 500 W) while all th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15dbdff8c505a61069b72edcae484e68
https://doi.org/10.1016/j.ijleo.2018.03.097
https://doi.org/10.1016/j.ijleo.2018.03.097
Publikováno v:
Optik. 154:459-466
The present study reports on a detailed investigation on the transition from amorphous to nanocrystalline silicon carbide films grown by means of reactive radiofrequency magnetron sputtering process at low substrate temperatures Ts ranging from 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2325164483fe933596452e5c9a00a4a
https://doi.org/10.1016/j.ijleo.2017.10.083
https://doi.org/10.1016/j.ijleo.2017.10.083
Akademický článek
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Publikováno v:
Superlattices and Microstructures. 100:228-236
The dependence on the temperature range, T, of the electronic transport mechanism in intrinsic and doped hydrogenated nanocrystalline silicon films, deposited by radiofrequency-magnetron sputtering at low substrate temperature, has been studied. Elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59f038d5799aa0d98ec9d2922ac32838
https://doi.org/10.1016/j.spmi.2016.09.035
https://doi.org/10.1016/j.spmi.2016.09.035
Autor:
Yamina Brahmi, L. Chahed, Y. Bouizem, A. Kebab, Larbi Filali, Ahmed Bouhekka, J.D. Sib, D. Benlakehal
Publikováno v:
Applied Surface Science. 384:107-115
We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221f5a4e7ad46957922f97447a07d1c6
https://doi.org/10.1016/j.apsusc.2016.05.013
https://doi.org/10.1016/j.apsusc.2016.05.013
Autor:
S.A. Memchout, L. Chahed, Y. Bouizem, J.D. Sib, D. Benlakehal, K. Zellama, A. Belfedal, A. Kebab
Publikováno v:
Thin Solid Films. 594:138-146
Structural and optical properties of two series of hydrogenated silicon films prepared by reactive radiofrequency magnetron sputtering technique at low substrate temperature, and with applied rf-powers of 150 W (series A) and 300 W (series B) were in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f28db2824e7c771ebc50bebc6ba851a9
https://doi.org/10.1016/j.tsf.2015.10.022
https://doi.org/10.1016/j.tsf.2015.10.022
Autor:
L. Chahed, J.D. Sib, Andreas Zeinert, Y. Bouizem, K. Zellama, O. Durand-Drouhin, M. Clin, D. Benlakehal, A. Belfedal, R. Baghdad
Publikováno v:
Materials Science in Semiconductor Processing. 26:231-237
The correlation between the surface roughness and optoelectronic properties of a series of intrinsic and doped nanocrystalline silicon samples deposited by rf-magnetron sputtering at low temperature has been deduced from atomic force microscopy, spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c3de9da7b56a5332f4195272ec41eb7
https://doi.org/10.1016/j.mssp.2014.04.033
https://doi.org/10.1016/j.mssp.2014.04.033