Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Y. Borokhovych"'
Autor:
Viktor Krozer, A. Kruger, I. Ostermay, P. Kulse, Mirko Fraschke, Olaf Krüger, T. Kramer, Y. Borokhovych, A. Thies, F.J. Schmuckle, Andreas Trusch, Wolfgang Heinrich, Bernd Tillack, Marco Lisker
Publikováno v:
ECS Journal of Solid State Science and Technology. 3:P17-P20
In this work, transmitters for broadband radio links are addressed in the frequency range 100...500 GHz, which are key building blocks for future wireless communication systems. What makes this work unique is that these components are to be realized
Autor:
Srdjan Glisic, Maruf Hossain, Chafik Meliani, O. Krueger, Wolfgang Heinrich, T. Kraemer, Ina Ostermay, Bernd Tillack, Mohamed Elkhouly, Viktor Krozer, B. Janke, J. Borngraeber, Y. Borokhovych, Thomas Jensen, Marco Lisker
Publikováno v:
IEEE Microwave and Wireless Components Letters. 24:469-471
A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT technology, which is integrated on top of the BiCMOS MMIC in
Autor:
Hans Gustat, Y. Borokhovych
Publikováno v:
ECS Transactions. 3:937-944
This paper presents a high-speed master-slave comparator in an ECL configuration. Implemented in 190 GHz SiGe HBT technology, the comparator occupies 0.7 x 0.7 mm2, including bondpads. The comparator can operate at a speed up to 20 GSample/s with a r
Autor:
W. Heinrich, Ina Ostermay, Y. Borokhovych, F.-J Schmueckle, M. Lisker, Viktor Krozer, Bernd Tillack, Thomas Jensen, E. Matthus, O. Krueger, A. Thies, Andreas Trusch, T. Kraemer, Ralf Doerner
Publikováno v:
2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using this process vertical interconnects are realized that
Autor:
Mohamed Hamouda, Johann-Christoph Scheytt, M. Robens, Y. Borokhovych, Thomas Ußmüller, Robert Weigel, Stefan Heinen, Martin Kmec, Jürgen Sachs, Benjamin Sewiolo, Rolf Kraemer, Ralf Wunderlich
Publikováno v:
Ultra-Wideband Radio Technologies for Communications, Localization and Sensor Applications
Rijeka : Intechopen.com, Ultra-Wideband Radio Technologies for Communications, Localization and Sensor Applications 369-438 (2013). doi:10.5772/54987
Ultra-wideband radio technologies for communications, localization and sensor applications / edited by Reiner Thomä, Reinhard H. Knöchel, Jürgen Sachs, Ingolf Willms and Thomas Zwick
Rijeka : Intechopen.com, Ultra-Wideband Radio Technologies for Communications, Localization and Sensor Applications 369-438 (2013). doi:10.5772/54987
Ultra-wideband radio technologies for communications, localization and sensor applications / edited by Reiner Thomä, Reinhard H. Knöchel, Jürgen Sachs, Ingolf Willms and Thomas Zwick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42cfd818503ded1714ffe810461bd78c
http://www.intechopen.com/articles/show/title/halos-integrated-rf-hardware-components-for-ultra-wideband-localization-and-sensing
http://www.intechopen.com/articles/show/title/halos-integrated-rf-hardware-components-for-ultra-wideband-localization-and-sensing
Publikováno v:
2012 IEEE/MTT-S International Microwave Symposium Digest.
this paper presents a new circuit for high-speed BiCMOS track-and-holds. The proposed approach improves the signal feedthrough in the hold mode and the bandwidth in the tracking mode. A prototype circuit is implemented in a 0.13 µm BiCMOS technology
Autor:
J. Christoph Scheytt, Y. Borokhovych
Publikováno v:
NORCHIP
Design and measurement of the bipolar Track-and-Hold Amplifier is described in this paper. The circuit works at the sample rate of 10 GS/s and has linearity of 8-bit at input signal of 3 GHz. Based on the open-loop switched emitter follower architect
Publikováno v:
2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems.
This paper presents a high-speed 4 bit full-flash Analog-to-Digital Converter with a new parallel reference network for an UWB radar. The ADC is implemented in 190 GHz SiGe BiCMOS technology, has more than 6 GHz effective resolution input bandwidth a
Autor:
Robert Weigel, M. Robens, Jürgen Sachs, K. Schilling, Ch. Scheytt, Ralf Wunderlich, Stefan Heinen, Y. Borokhovych, Martin Kmec, Benjamin Sewiolo, Hans Gustat
Publikováno v:
Frequenz. 63
Autor:
Hans Gustat, Y. Borokhovych
Publikováno v:
2008 NORCHIP.
This paper presents a high-speed 4 bits full-flash Analog-to-Digital Converter for an UWB radar applications, implemented in 190 GHz SiGe BiCMOS technology. The ADC occupies 1.5 × 1.5 mm2, including bondpads. Converter has 6 GHz input bandwidth and