Zobrazeno 1 - 10
of 285
pro vyhledávání: '"Y. Betser"'
Autor:
D. Mensa, S.C. Martin, R.P. Smith, S. Jaganathan, T. Mathew, Rajasekhar Pullela, J. Guthrie, Q. Lee, Mark J. W. Rodwell, B. Agarwal, Stephen I. Long, Dennis W. Scott, Uddalak Bhattacharya, Y. Betser, P. Krishnan, Miguel Urteaga
Publikováno v:
International Journal of High Speed Electronics and Systems. 11:159-215
High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d435f60efa51ee047c3f39451e3ad166
https://doi.org/10.1142/s0129156401000824
https://doi.org/10.1142/s0129156401000824
Autor:
Rajasekhar Pullela, Q. Lee, S.C. Martin, Stephen I. Long, D. Mensa, Miguel Urteaga, T. Mathew, Mattias E. Dahlstrom, Mark J. W. Rodwell, B. Agarwal, Uddalak Bhattacharya, Y. Betser, J. Guthrie, Lorene Samoska, Dennis W. Scott, S. Jaganathan, S. Krishnan, R.P. Smith
Publikováno v:
IEEE Transactions on Electron Devices. 48:2606-2624
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c7a5fb696856083e9b6acc985e68827
https://doi.org/10.1109/16.960387
https://doi.org/10.1109/16.960387
Autor:
D. Mensa, Mark J. W. Rodwell, Y. Betser, T. Mathew, S. Jaganathan, S. Krishnan, Dennis W. Scott, Yun Wei, R. Urteaga
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1343-1350
We report an 18-GHz clock-rate second-order continuous-time /spl Sigma/-/spl Delta/ analog-digital converter (ADC) implemented using InP-transferred substrate HBTs. Under two-tone test conditions, the ADC achieved 43 dB and 33 dB SNR at signal freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e992307411014cec505135f8b231e3
https://doi.org/10.1109/4.944661
https://doi.org/10.1109/4.944661
Autor:
M. Orentstein, G. Eisentstein, A. Madjar, J. Lasri, Dan Ritter, Y. Betser, S. Cohen, V. Sidorov, Alwyn J. Seeds
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:1358-1364
An integrated electrically pumped opto-electronic mixer consisting of two InP-GaInAs heterojunction bipolar transistors in a cascode configuration is demonstrated. Intrinsic down-conversion gains of 18.2 and 8.9 dB at RF optical modulation frequencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8368dc1cb4cfc0370c0e2c81fbbff3
https://doi.org/10.1109/22.775479
https://doi.org/10.1109/22.775479
Autor:
Y. Betser, Dan Ritter
Publikováno v:
IEEE Transactions on Electron Devices. 46:628-633
The base-collector capacitance of an InP/GaInAs heterojunction bipolar transistor (HBT) was measured as a function of collector current and base-collector voltage. The experimentally obtained results were considerably smaller than the expected dielec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8de22c3dd6f24cfcdc8f0a0654006397
https://doi.org/10.1109/16.753693
https://doi.org/10.1109/16.753693
Publikováno v:
Journal of Lightwave Technology. 17:1423-1428
A heterojunction bipolar transistor (HBT) optoelectronic mixer was studied experimentally and theoretically. A detailed large signal /spl pi/-model and a small signal analysis are described. The frequency dependence of down and up conversion has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac41454c4e8312710416c2493ac46a7
https://doi.org/10.1109/50.779164
https://doi.org/10.1109/50.779164
Publikováno v:
Journal of Lightwave Technology. 16:605-609
A high-conversion gain three-terminal heterojunction bipolar transistor (HBT) optoelectronic mixer has been demonstrated. The maximum obtained intrinsic conversion gain was 10.4 dB. The mixing performance was measured as a function of the dc bias of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7400126016d9c24d3b2766401bf4d83b
https://doi.org/10.1109/50.664070
https://doi.org/10.1109/50.664070
Autor:
Y. Betser, Dan Ritter
Publikováno v:
IEEE Transactions on Electron Devices. 43:1187-1192
Magneto transport experiments were carried out to study electron transport in the p-type base of InP/GaInAs heterojunction bipolar transistors (HBT's). Electron minority carrier mobility was measured in the /spl deg/K for two dopant concentrations in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1833cd7290582eb2ff80d6930ecc30bb
https://doi.org/10.1109/16.506767
https://doi.org/10.1109/16.506767
Publikováno v:
IEEE Journal of Quantum Electronics. 30:1995-2000
A new expression is derived for the transmission coefficient of incident electrons scattered by a varying potential with discontinuities. The expression is applicable above, below, and near the potential peak. As an example, electron transmission acr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715946499ee1fa2bfbea4816f3123bf8
https://doi.org/10.1109/3.309857
https://doi.org/10.1109/3.309857
Publikováno v:
IEEE Electron Device Letters. 22:56-58
We report the design, fabrication, and measurement of InAlAs/InGaAs heterostructure bipolar transistors (HBTs) designed for high speed digital circuits. At 0.96 V V/sub CE/ the current gain cutoff frequency, f/sub /spl tau//, is 300 GHz and the maxim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2548b6401acea7d415234699215b62ef
https://doi.org/10.1109/55.902830
https://doi.org/10.1109/55.902830