Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Y. Ayasli"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 40:1989-1996
A low-loss, inductive gate bias network structure which allows a very high stacking level of FET devices for high-power RF switching applications is reported. The design, implementation, and performance of S- and C-band SPDT switches based on this st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5067d421328985e4d4210e0e9f720b
https://doi.org/10.1109/22.168755
https://doi.org/10.1109/22.168755
Autor:
Y. Ayasli, J.L. Vorhaus, R.C. Waterman, R.A. Pucel, S. Temple, D. Wandrei, A. Platzker, C. Cavicchio
Publikováno v:
MTT-S International Microwave Symposium Digest.
The design, construction, and performance of an X-band multi-chip GaAs monolithic transmit /receive module is described. The module consists of a four-bit FET phase -shifter, two-stage low-noise amplifier, four-stage power amplifier, and associated F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ebd51e8693aaedb4bddf5bae92da3d
https://doi.org/10.1109/mwsym.1982.1130766
https://doi.org/10.1109/mwsym.1982.1130766
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A monolithic transmit-receive GaAs FET switch capable of switching more than 10 W CW power with about 1 dB insertion loss and 26 dB isolation at X-band frequencies is reported.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbb0a5bc4dcc61743ba51678b07f3c4
https://doi.org/10.1109/mcs.1982.1112178
https://doi.org/10.1109/mcs.1982.1112178
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A wideband monolithic phase shifter operating in the 2-8 GHz frequency range is reported. Six GaAs FETs per bit are used as switch elements in a bridge configuration which alternatively becomes a highpass or a low-pass section. Their low impedance st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9d83bf316afa48c3631b8aa45d5c492
https://doi.org/10.1109/mcs.1984.1113617
https://doi.org/10.1109/mcs.1984.1113617
Autor:
Y. Ayasli
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb63ff7cfb72201221ee62e05c6aa33f
https://doi.org/10.1109/mcs.1986.1114494
https://doi.org/10.1109/mcs.1986.1114494
Autor:
Y. Ayasli
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f09c5eec2f8b390c8f026f516639de9d
https://doi.org/10.1109/mcs.1987.1114498
https://doi.org/10.1109/mcs.1987.1114498
Publikováno v:
MTT-S International Microwave Symposium Digest.
X-band GaAs MMIC passive phase shifters have been developed using FET switches. A four-bit digital phase shifter with 5.1 +- 0.6 dB insertion loss has been realized on a single 6.4 x 7.9 x 0.1 mm chip.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fac8bf0e25d03625ffa25073e74ba83
https://doi.org/10.1109/mwsym.1982.1130765
https://doi.org/10.1109/mwsym.1982.1130765
Publikováno v:
Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.
A monolithic-switch FET (MFET) control device that can be integrated with other monolithic functions or used as a discrete component in a monolithic microwave integrated circuit (MMIC) structure is presented. The MFET device is a suitable replacement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0fc4d6899f5dece8c3bf80e82e9040d
https://doi.org/10.1109/mcs.1989.37261
https://doi.org/10.1109/mcs.1989.37261
Autor:
L. Reynolds, Y. Ayasli
Publikováno v:
11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.
A novel low-power frequency-modulated continuous-wave (FMCW) radar MMIC (monolithic microwave integrated circuit) chip has been demonstrated. It incorporates an electronic circulator in order to allow single antenna operation in miniature low-cost ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9b4b7187f32e1e03d8d2d815294b9d
https://doi.org/10.1109/gaas.1989.69334
https://doi.org/10.1109/gaas.1989.69334
Publikováno v:
IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.
A power amplifier topology was demonstrated in a microwave monolithic integrated circuit (MMIC) implementation with GaAs MESFETs. This topology overcomes several limitations of the traditional approach of paralleling of power transistor unit cells. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11478ff15c6985b85f2dc594ed82213
https://doi.org/10.1109/mcs.1992.185992
https://doi.org/10.1109/mcs.1992.185992