Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Y. Apanovich"'
Autor:
M. Y. Apanovich
Publikováno v:
Vestnik MGIMO-Universiteta, Vol 0, Iss 6(21), Pp 248-255 (2011)
Externí odkaz:
https://doaj.org/article/c69ddda19613429185001626ccd0cd1c
Autor:
M. Y. Apanovich
Publikováno v:
Vestnik MGIMO-Universiteta, Vol 0, Iss 5(14), Pp 315-319 (2010)
Externí odkaz:
https://doaj.org/article/89f9fe3f695f4aac9cf7b066062c2355
Publikováno v:
IEEE Transactions on Electron Devices. 42:890-898
Stratton's energy balance model for nonlocal charge transport in semiconductors is extended to include the effects of heterojunctions and lattice heating. The extended model is implemented in a general purpose 2D device simulator. Calculated results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9eb430d1b4743e65ee267b0c15bf61d
https://doi.org/10.1109/16.381985
https://doi.org/10.1109/16.381985
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 13:702-711
The differences between two widely used intermediate-level charge transport models are investigated. The origins of the models are reviewed, and mathematical relationships between the models are established. The practical consequences of the differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6dd9c8823afe1c00986ac81b6bfeac8
https://doi.org/10.1109/43.285243
https://doi.org/10.1109/43.285243
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 12:531-539
Self‐consistent electrothermal simulation of modern semiconductor devices is required for the accurate and efficient design and optimization of many semiconductor devices. The need to perform this type analysis in order to predict the behavior of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59cfbfc60deeda5a0fc9038681f2e10
https://doi.org/10.1108/eb051826
https://doi.org/10.1108/eb051826
Publikováno v:
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering. 12:221-230
The use of energy balance and simplified hydrodynamic models for simulating GaAs devices is investigated. The simplified hydrodynamic model predicts velocity spikes that are not present in more detailed Monte Carlo simulation results. These velocity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6e78c435711d6b3a3db603b9e852f1
https://doi.org/10.1108/eb051801
https://doi.org/10.1108/eb051801
Autor:
Ciby Thuruthiyil, Vineet Wason, A.B. Icel, Niraj Subba, Jung-Suk Goo, Y. Apanovich, Qiang Chen, Awanish Pandey, Tran Ly
Publikováno v:
2008 IEEE International SOI Conference.
Accurate extraction of the SPICE model parameter is critical in the CMOS IC design. However, it faces difficult issues in state-of-the-art MOSFET technology. First, the gate CV parameter extraction is challenging due to small values and many extrinsi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e11133c8123860704b1e4d7f825b0b
https://doi.org/10.1109/soi.2008.4656340
https://doi.org/10.1109/soi.2008.4656340
Publikováno v:
Proceedings. IEEE International SOI Conference.
Traditional semiconductor device simulators use the drift-diffusion and isothermal (constant lattice temperature) approximations. These can lead to poor accuracy in predicting the electrical characteristics of modern submicron devices, because non-lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032977cb93516f281b94ebb71f727541
https://doi.org/10.1109/soi.1994.514221
https://doi.org/10.1109/soi.1994.514221
Publikováno v:
IEEE Transactions on Electron Devices. 40:2094-2096
Non-isothermal device simulation is used to calculate the drain characteristics of an SOI transistor. The breakdown voltage is found to be lower when lattice heating is accounted for, rather than higher, as the temperature dependence of the ionizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cda73efbdf7110d0bf021562d815f2f
https://doi.org/10.1109/16.239756
https://doi.org/10.1109/16.239756
Autor:
Vasily G. Arkhipkin, Chengwu An, Yongchang Fan, Zaiguang Li, Jun Ai, V. Y. Apanovich, Alexander K. Popov, Yi Sun
Publikováno v:
SPIE Proceedings.
This paper is aimed at discussing the basic principles of light-induced drift (LID) and estimating the characteristic of the effect, produced by quasi-black-body radiation. Many astrophysical objects as well as laser-produced plasmas may be described
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::969d17d5bff4bb2bb481b01e2ef94733
https://doi.org/10.1117/12.144099
https://doi.org/10.1117/12.144099