Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Y. A. Zhivodkov"'
Autor:
K V Feklistov, A G Lemzyakov, I P Prosvirin, A A Gismatulin, A A Shklyaev, Y A Zhivodkov, G К Krivyakin, A I Komonov, А S Kozhukhov, E V Spesivsev, D V Gulyaev, D S Abramkin, A M Pugachev, D G Esaev, G Yu Sidorov
Publikováno v:
Materials Research Express, Vol 7, Iss 12, p 125903 (2020)
RF magnetron-deposited Si\In _2 O _3 :Er films have the structure of the single-crystalline bixbyite bcc In _2 O _3 nanowires bunched into the columns extended across the films. The obtained films have a typical In _2 O _3 optical band gap of 3.55 eV
Externí odkaz:
https://doaj.org/article/fb6f878faf224a02bcb567b91d396ae6
Autor:
K. N. Astankova, A. S. Kozhukhov, G. K. Krivyakin, Y. A. Zhivodkov, D. V. Sheglov, V. A. Volodin
Publikováno v:
Journal of Laser Applications. 34:022002
In the present work, the low-fluence nonablating femtosecond laser irradiation (λ = 800 nm) of the GeO2 layer with Ge nanoclusters protected by SiO2 layers is studied by different types of microscopy (optical microscopy, atomic force microscopy, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b37db4fde5efaa7bbbd8d61e41723925
https://doi.org/10.2351/7.0000620
https://doi.org/10.2351/7.0000620
Autor:
D. V. Gulyaev, G. К Krivyakin, Igor P. Prosvirin, D. S. Abramkin, G. Yu Sidorov, A. I. Komonov, A. M. Pugachev, K. V. Feklistov, Y. A. Zhivodkov, E. V. Spesivsev, A. G. Lemzyakov, A. A. Shklyaev, A. A. Gismatulin, А S. Kozhukhov, D. G. Esaev
Publikováno v:
Materials Research Express. 7:125903
RF magnetron-deposited Si\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41aa70dbee7103649808357e8e20bd7b
https://doi.org/10.1088/2053-1591/abd06b
https://doi.org/10.1088/2053-1591/abd06b