Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Y V Solov'ev"'
Autor:
Maxim A. Odnoblyudov, I. I. Novikov, I. S. Polukhin, Vladislav E. Bougrov, O. A. Kozyreva, A. Yu. Egorov, E. S. Kolodeznyi, E. Z. Gareev, Y V Solov’ev, L. Ya. Karachinsky, G A Mikhailovskiy, A. K. Mikhailov
Publikováno v:
Journal of Physics: Conference Series. 917:052029
We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and intern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29d03cc66f473f2a06ce69aa0f3161c
https://doi.org/10.1088/1742-6596/917/5/052029
https://doi.org/10.1088/1742-6596/917/5/052029
Autor:
A.A. Efremov, Y V Solov’ev, A.N. Kirsyaev, I. S. Polukhin, A.E. Gubenko, Maxim A. Odnoblyudov, D.A. Livshits, Vladislav E. Bougrov, D. A. Rybalko, G A Mikhailovskiy, A.N. Firsov
Publikováno v:
Journal of Physics: Conference Series. 741:012079
We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::758a5e3834388b8de6014128db173d31
https://doi.org/10.1088/1742-6596/741/1/012079
https://doi.org/10.1088/1742-6596/741/1/012079
Autor:
O A Kozyreva, Y V Solov’ev, I S Polukhin, A K Mikhailov, G A Mikhailovskiy, M A Odnoblyudov, E Z Gareev, E S Kolodeznyi, I I Novikov, L Ya Karachinsky, A Yu Egorov, V E Bougrov
Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 917 Issue 5, p1-1, 1p